Conductive oxygen barrier for complex oxides

Abstract

A conductive oxygen barrier layer, a stack comprising the conductive oxygen barrier layer, and method of forming the stack for a semiconductor device are provided. The method includes providing a semiconductor substrate, forming a conductive electrode layer on the semiconductor substrate, and forming a conductive oxygen barrier layer on the electrode layer, and then forming at least one complex oxide layer on the oxygen barrier layer. The forming of the oxygen barrier layer includes forming a silicon layer on the electrode layer and a platinum layer on the silicon layer. The forming of the at least one complex oxide layer comprises heating to a temperature in a range of 500-700° C. or higher, which results in the oxygen barrier layer comprising an alloy of platinum and silicon.

Dependencies are inferred from the claim text.