H10D 64/671
The conductor having lateral variation in doping or structure
Official title: {the conductor having lateral variation in doping or structure}
H10D64/671 (The conductor having lateral variation in doping or structure) appears on 1,244 US grants and 1,219 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,244
- Published applications
- 1,219
- Assignees
- 274
- Inventors
- 2,240
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 3 | 0 |
| 1978 | 0 | 0 |
| 1979 | 2 | 0 |
| 1980 | 2 | 0 |
| 1981 | 2 | 0 |
| 1982 | 4 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 3 | 0 |
| 1987 | 2 | 0 |
| 1988 | 3 | 0 |
| 1989 | 1 | 0 |
| 1990 | 5 | 0 |
| 1991 | 4 | 0 |
| 1992 | 3 | 0 |
| 1993 | 3 | 0 |
| 1994 | 8 | 0 |
| 1995 | 5 | 0 |
| 1996 | 5 | 0 |
| 1997 | 11 | 0 |
| 1998 | 20 | 0 |
| 1999 | 42 | 0 |
| 2000 | 46 | 0 |
| 2001 | 44 | 13 |
| 2002 | 26 | 39 |
| 2003 | 43 | 36 |
| 2004 | 38 | 35 |
| 2005 | 28 | 42 |
| 2006 | 29 | 28 |
| 2007 | 26 | 36 |
| 2008 | 13 | 33 |
| 2009 | 24 | 33 |
| 2010 | 25 | 33 |
| 2011 | 24 | 32 |
| 2012 | 26 | 41 |
| 2013 | 35 | 44 |
| 2014 | 38 | 40 |
| 2015 | 43 | 72 |
| 2016 | 61 | 58 |
| 2017 | 67 | 64 |
| 2018 | 59 | 71 |
| 2019 | 86 | 75 |
| 2020 | 63 | 74 |
| 2021 | 47 | 66 |
| 2022 | 54 | 61 |
| 2023 | 42 | 56 |
| 2024 | 52 | 58 |
| 2025 | 47 | 45 |
| 2026 | 25 | 34 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and manufacturing method thereof15 Sep 2026US 12,740,120 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit device15 Sep 2026US 12,740,130 B2Samsung Electronics Co., Ltd.
- Method of manufacturing a semiconductor device with multi-layer gate spacers8 Sep 2026US 12,733,244 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Field effect transistor with inner spacer liner layer and method25 Aug 2026US 12,720,838 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with supporting structures and method for forming the same25 Aug 2026US 12,720,846 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure with nitrided inner spacers and method for manufacturing the same8 Oct 2026US 2026/0314010 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacture8 Oct 2026US 2026/0314011 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Gate structure for semiconductor device8 Oct 2026US 2026/0314023 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Large dimension metal gate field-effect transistor (fet) with metal gate dummy structures8 Oct 2026US 2026/0314024 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Transistor device having a gate setback from a gate dielectric1 Oct 2026US 2026/0304870 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor device and method of manufacturing the same372US 6,737,716 B1Kabushiki Kaisha Toshiba · 2004
- Gate-all-around nanowire MOSFET and method of formation332US 8,969,934 B1International Business Machines Corporation · 2015
- Low-K gate spacers by fluorine implantation252US 6,720,213 B1International Business Machines Corporation · 2004
- MOS transistor with assisted-gates and ultra-shallow “Psuedo” source and drain extensions for ultra-large-scale integration245US 6,312,995 B1Advanced Micro Devices, Inc. · 2001
- Method for producing gate stack sidewall spacers240US 7,253,123 B2APPLIED Materials.Inc. · 2007