Gate-all-around nanowire MOSFET and method of formation

An apparatus for a semiconductor device, comprising:

• a nanowire formed on an insulator layer disposed on a substrate of semiconductor material, a first end of the nanowire being in communication with a source region and a second end of the nanowire being in communication with a drain region;
• a gate positioned across and extending substantially transverse to the nanowire between the source region and the drain region, the gate comprising an electrode and spacers positioned on opposing sides of the electrode and extending substantially transverse to the nanowire;
• and
• wherein a bottom portion of the gate surrounds a portion of the nanowire extending from the source region to the drain region, and wherein outer surfaces of the gate extend vertically downward into the insulator layer but do not extend beyond the inner faces of the spacers toward the source region and the drain region;
• and
• wherein the gate further comprises a layer of high-k dielectric material disposed between the electrode and the nanowire and between the electrode and the spacers.