H10D 64/665
The conductor comprising a layer of elemental metal contacting the insulator
Official title: {the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum (having lateral variation H10D64/671)}
H10D64/665 (The conductor comprising a layer of elemental metal contacting the insulator) appears on 2,069 US grants and 2,339 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,069
- Published applications
- 2,339
- Assignees
- 336
- Inventors
- 3,282
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 4 | 0 |
| 1982 | 3 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 3 | 0 |
| 1988 | 4 | 0 |
| 1989 | 4 | 0 |
| 1990 | 3 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 3 | 0 |
| 1997 | 2 | 0 |
| 1998 | 4 | 0 |
| 1999 | 7 | 0 |
| 2000 | 10 | 0 |
| 2001 | 19 | 1 |
| 2002 | 11 | 14 |
| 2003 | 22 | 19 |
| 2004 | 19 | 37 |
| 2005 | 22 | 49 |
| 2006 | 38 | 74 |
| 2007 | 24 | 50 |
| 2008 | 28 | 66 |
| 2009 | 37 | 70 |
| 2010 | 62 | 78 |
| 2011 | 64 | 84 |
| 2012 | 56 | 81 |
| 2013 | 83 | 93 |
| 2014 | 111 | 125 |
| 2015 | 168 | 211 |
| 2016 | 212 | 239 |
| 2017 | 208 | 190 |
| 2018 | 162 | 147 |
| 2019 | 160 | 130 |
| 2020 | 131 | 127 |
| 2021 | 86 | 76 |
| 2022 | 71 | 61 |
| 2023 | 61 | 86 |
| 2024 | 63 | 65 |
| 2025 | 54 | 88 |
| 2026 | 33 | 78 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device and manufacturing method thereof22 Sep 2026US 12,745,422 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Wide band gap semiconductor device with surface insulating film22 Sep 2026US 12,745,445 B2Rohm Co., Ltd.
- Semiconductor device and method of fabricating the same8 Sep 2026US 12,733,476 B2Samsung Electronics Co., Ltd.
- Semiconductor device structure and methods of forming the same25 Aug 2026US 12,720,824 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Contact arrangements for transistors11 Aug 2026US 12,707,700 B2Micron Technology, Inc.
- Gate structures with protection layer for semiconductor devices8 Oct 2026US 2026/0313977 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory devices having pillar interior select1 Oct 2026US 2026/0304765 A1Micron Technology, Inc.
- Field effect transistor threshold voltage tuning through fluorine doping of gate stack1 Oct 2026US 2026/0304926 A1Intel Corporation
- Semiconductor device structure and method for forming the same1 Oct 2026US 2026/0304940 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and semiconductor memory device24 Sep 2026US 2026/0293210 A1Kioxia Corporation
Most cited
By later US patents
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Precursor source mixtures666US 6,984,591 B1International Business Machines Corporation · 2006
- Method for the manufacture of an insulated gate field effect semiconductor device359US 6,784,033 B1Semiconductor Energy Laboratory Co.Ltd. · 2004
- Gate-all-around nanowire MOSFET and method of formation332US 8,969,934 B1International Business Machines Corporation · 2015
- Method of forming dual metal gate structures or CMOS devices325US 6,291,282 B1Texas Instruments Incorporated · 2001