H10D 64/666
The conductor further comprising additional layers
Official title: {the conductor further comprising additional layers}
H10D64/666 (The conductor further comprising additional layers) appears on 756 US grants and 911 published applications in this corpus.
Search patents in H10D- Granted patents
- 756
- Published applications
- 911
- Assignees
- 173
- Inventors
- 1,528
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 2 | 0 |
| 2002 | 2 | 4 |
| 2003 | 4 | 4 |
| 2004 | 4 | 10 |
| 2005 | 8 | 17 |
| 2006 | 9 | 17 |
| 2007 | 4 | 13 |
| 2008 | 8 | 23 |
| 2009 | 15 | 30 |
| 2010 | 25 | 29 |
| 2011 | 20 | 25 |
| 2012 | 18 | 22 |
| 2013 | 24 | 30 |
| 2014 | 40 | 53 |
| 2015 | 47 | 71 |
| 2016 | 58 | 78 |
| 2017 | 68 | 59 |
| 2018 | 56 | 55 |
| 2019 | 74 | 74 |
| 2020 | 69 | 67 |
| 2021 | 44 | 37 |
| 2022 | 39 | 36 |
| 2023 | 32 | 51 |
| 2024 | 32 | 27 |
| 2025 | 29 | 39 |
| 2026 | 15 | 40 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Multi-threshold voltage devices and associated techniques and configurations21 Jul 2026US 12,690,223 B2Sony Group Corporation
- Interconnect structure having a multi-deck conductive feature and method of forming the same14 Jul 2026US 12,684,854 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Gate structures with protection layer for semiconductor devices8 Oct 2026US 2026/0313977 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Field effect transistor threshold voltage tuning through fluorine doping of gate stack1 Oct 2026US 2026/0304926 A1Intel Corporation
- Semiconductor device and semiconductor memory device24 Sep 2026US 2026/0293210 A1Kioxia Corporation
- Semiconductor storage device and manufacturing method thereof17 Sep 2026US 2026/0279413 A1
- High resistance structures and methods17 Sep 2026US 2026/0282481 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method for forming an MOS transistor having a metallic gate electrode that is formed after the formation of self-aligned source and drain regions258US 5,960,270 AMotorola, Inc. · 1999
- Method for forming metal replacement gate of high performance119US 6,921,711 B2International Business Machines Corporation · 2005
- Method of manufacturing a transistor in a semiconductor device89US 6,537,901 B2Hynix Semiconductor Inc. · 2003
- Tasin oxygen diffusion barrier in multilayer structures86US 5,796,166 AIBM Corporation · 1998
- Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA84US 7,241,686 B2APPLIED Materials.Inc. · 2007