Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA

A method for forming a tantalum-containing material on a substrate surface, comprising:

• forming a tantalum-containing gas by heating a liquid TAIMATA precursor contained within a vaporizer to a predetermined temperature, while flowing a carrier gas through the vaporizer;
• exposing a substrate within a process chamber to an atomic layer deposition process comprising a pulse of the tantalum-containing gas, a pulse of a nitrogen-containing gas, and a pulse of a silicon-containing gas;
• and
• forming a tantalum barrier layer having a predetermined thickness by repeating the atomic layer deposition process.

A method for forming a device by depositing a tantalum-containing material on a substrate surface, comprising:

• exposing a substrate within a process chamber sequentially to a pulse of a tantalum-containing gas comprising TAIMATA and to a pulse of a process gas comprising at least one secondary precursor;
• depositing a tantalum-containing film on the substrate;
• repeating the exposing step until the tantalum-containing film is deposited having a predetermined thickness;
• and
• depositing a metal layer on the tantalum-containing film.