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US 5,796,166 AGranted
Tasin oxygen diffusion barrier in multilayer structures
AssigneeIBM Corporation
InventorsPaul David Agnello, Cyril Cabral, Jr., Alfred Grill, Christopher Vincent Jahnes, Thomas John Licata, Ronnen Andrew Roy
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Abstract
A multilayer structure having an oxygen or dopant diffusion barrier fabricated of an electrically conductive, thermally stable material of refractory metal-silicon-nitrogen which is resistant to oxidation, prevents out-diffusion of dopants from silicon and has a wide process window wherein the refractory metal is selected from Ta, W, Nb, V, Ti, Zr, Hf, Cr and Mo.
Claims7
A semiconductor structure comprising:
- a silicon base layer having a top surface, and a refractory metal-silicon-nitrogen diffusion barrier layer adhered to the top surface of said silicon base layer, said diffusion barrier layer is deposited between a silicon base layer and a contact layer with a high permittivity oxide film deposited on top of said contact layer,
- whereby said refractory metal-silicon-nitrogen layer protects said silicon base layer from oxidation upon contact with oxygen by the semiconductor structure.
A capacitor in a semiconductor device comprising:
- a silicon substrate,
- a refractory metal-silicon-nitrogen diffusion barrier layer,
- an oxidation resistant contact layer,
- a high permittivity oxide layer, and
- a contact metal electrode layer.
2 more elements
Dependencies are inferred from the claim text.