Method for the manufacture of an insulated gate field effect semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
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Abstract
A method for the manufacture of an insulated gate field effect semiconductor device comprised of a semiconductor substrate, a gate insulating layer member having at least an insulating layer, and a gate electrode. The insulating layer is formed of silicon or aluminum nitride on the semiconductor substrate or the gate electrode by a photo CVD process.
Claims48
A method of manufacturing a semiconductor device having at least a gate electrode, a gate insulating film on the gate electrode, an amorphous semiconductor layer on the gate insulating film and a pair of n+ type semiconductor layers formed on the amorphous semiconductor layer, said method comprising the steps of:
- placing a substrate having said gate electrode formed thereon in a reaction chamber;
- introducing a film forming gas into said reaction chamber;
- forming said gate insulating film on sais gate electrode by exciting said film forming gas in said reaction chamber;
- introducing a cleaning gas into said reaction chamber after the formation of said gate insulating film;
- etching an unnecessary layer formed on an inside of said reaction chamber by exciting said cleaning gas;
- forming said pair of n+ type semiconductor layers on said amorphous semiconductor layer;
- and
- forming source and drain electrodes on said pair of n+ type semiconductor layers,
- wherein an inner edge and an outer edge of said pair of n+ type semiconductor layers are coextensive with an inner edge and an outer edge of said source and drain electrodes.
A method of manufacturing a semiconductor device having at least a gate electrode, a gate insulating film on the gate electrode, and a semiconductor layer on the gate insulating film, said method comprising the steps of:
- placing a substrate having said gate electrode formed thereon in a reaction chamber;
- introducing a film forming gas into said reaction chamber;
- forming said gate insulating film on said gate electrode by exciting said film forming gas in said reaction chamber;
- introducing a cleaning gas into said reaction chamber after the formation of said gate insulating film;
- etching an unnecessary layer formed on an inside of said reaction chamber by exciting said cleaning gas,
- wherein said gate insulating film comprises silicon nitride.
A method of manufacturing a semiconductor device having at least a gate electrode, a gate insulating film adjacent to the gate electrode, and a semiconductor adjacent to the gate insulating film, said method comprising the steps of:
- introducing a film forming gas into said reaction chamber;
- forming said gate insulating film in said reaction chamber;
- introducing a cleaning gas into said reaction chamber after the formation of said gate insulating film;
- etching an unnecessary layer formed on an inside of said reaction chamber by exciting said cleaning gas,
- wherein said gate insulating film comprises silicon nitride.
A method of manufacturing a semiconductor device having at least a gate electrode, a gate insulating film adjacent to the gate electrode, and a semiconductor adjacent to the gate insulating film, said method comprising the steps of:
- introducing a film forming gas into said reaction chamber;
- forming said gate insulating film in said reaction chamber;
- introducing a cleaning gas into said reaction chamber after the formation of said gate insulating film;
- etching an unnecessary layer formed on an inside of said reaction chamber by exciting said cleaning gas,
- wherein said gate insulating film comprises silicon nitride, and
- wherein said gas insulating film is formed on said semiconductor.
A method of manufacturing an insulated gate field effect transistor comprising the steps of:
- forming a gate electrode over a substrate;
- forming a gate insulating film adjacent to said gate electrode by CVD in a reaction chamber;
- introducing a cleaning gas comprising NF3 into said reaction chamber after the formation of said gate insulating film;
- exciting said cleaning gas in order to remove an unnecessary layer from an inside of said reaction chamber, wherein said unnecessary layer comprises a material which is formed during the formation of said gate insulating film.
A method of manufacturing an insulated gate field effect transistor comprising the steps of:
- forming a gate electrode over a substrate;
- forming a gate insulating film adjacent to said gate electrode by CVD in a reaction chamber;
- introducing a cleaning gas comprising NF3 into said reaction chamber after the formation of said gate insulating film;
- exciting said cleaning gas in order to remove an unnecessary layer from an inside of said reaction chamber, wherein said unnecessary layer comprises a material which is formed during the formation of said gate insulating film,
- wherein said gate electrode is formed on said gate insulating film.
A method of manufacturing an insulated gate field effect transistor comprising the steps of:
- forming a gate electrode comprising a material selected from the group consisting of Mo, Ti, W, WSi2, MoSi2, and TiSi2 over a substrate;
- forming a gate insulating film adjacent to said gate electrode by CVD in a reaction chamber;
- introducing a cleaning gas comprising NF3 into said reaction chamber after the formation of said gate insulating film;
- exciting said cleaning gas in order to remove an unnecessary layer from an inside of said reaction chamber, wherein said unnecessary layer comprises a material which is formed during the formation of said gate insulating film.
A method of manufacturing an insulated gate field effect transistor comprising the steps of:
- forming a gate electrode comprising a material selected from the group consisting of Mo, Ti, W, WSi2, MoSi2, and TiSi2 over a substrate;
- forming a gate insulating film adjacent to said gate electrode by CVD in a reaction chamber;
- introducing a cleaning gas comprising NF3 into said reaction chamber after the formation of said gate insulating film;
- exciting said cleaning gas in order to remove an unnecessary layer from an inside of said reaction chamber, wherein said unnecessary layer comprises a material which is formed during the formation of said gate insulating film,
- wherein said gate electrode is formed on said gate insulating film.
Dependencies are inferred from the claim text.