H10D 64/683
Being parallel to the channel plane
Official title: {being parallel to the channel plane}
H10D64/683 (Being parallel to the channel plane) appears on 525 US grants and 607 published applications in this corpus.
Search patents in H10D- Granted patents
- 525
- Published applications
- 607
- Assignees
- 155
- Inventors
- 1,042
- Latest grant
- 29 Sep 2026
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| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
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| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
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| 1992 | 1 | 0 |
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| 1994 | 3 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 3 | 0 |
| 1998 | 2 | 0 |
| 1999 | 5 | 0 |
| 2000 | 4 | 0 |
| 2001 | 7 | 4 |
| 2002 | 5 | 9 |
| 2003 | 10 | 8 |
| 2004 | 8 | 11 |
| 2005 | 11 | 11 |
| 2006 | 11 | 19 |
| 2007 | 8 | 15 |
| 2008 | 5 | 14 |
| 2009 | 7 | 18 |
| 2010 | 10 | 16 |
| 2011 | 12 | 10 |
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| 2013 | 8 | 26 |
| 2014 | 35 | 32 |
| 2015 | 34 | 57 |
| 2016 | 48 | 61 |
| 2017 | 60 | 40 |
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| 2019 | 32 | 31 |
| 2020 | 28 | 37 |
| 2021 | 30 | 25 |
| 2022 | 18 | 27 |
| 2023 | 22 | 34 |
| 2024 | 25 | 16 |
| 2025 | 15 | 22 |
| 2026 | 8 | 18 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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By later US patents
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- Method of making MOSFET with high dielectric constant gate insulator and minimum overlap capacitance141US 6,271,094 B1International Business Machines Corporation · 2001
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