Semiconductor device and manufacture method
AssigneeNanya Technology Corporation
InventorFeng Wen Hsu
Life of this patent
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Abstract
A semiconductor device includes a patterned substrate, a first barrier layer, a second barrier layer and a conductive layer. The patterned substrate has a trench and a sidewall surrounding the trench. The first barrier layer disposed on a first portion of the sidewall. The second barrier layer with a permittivity from 0.5 to 3.8 is disposed on the first barrier layer and a second portion of the sidewall, in which the second portion of the sidewall is higher than the first portion of the sidewall and neighboring to a top surface of the patterned substrate. A conductive layer fills the trench. A method of manufacturing a semiconductor device is further provided.
Claims10
A semiconductor device comprising:
- a patterned substrate having a trench and a sidewall surrounding the trench;
- a first barrier layer disposed on a first portion of the sidewall;
- a second barrier layer disposed on the first barrier layer and a second portion of the sidewall, wherein the second portion of the sidewall is higher than the first portion of the sidewall and neighboring to a top surface of the patterned substrate, wherein a permittivity of the first barrier layer is higher than a permittivity of the second barrier layer;
- and
- a conductive layer filling the trench, wherein the conductive layer is disposed on the first barrier layer and an overlapping region of the first barrier layer and the second barrier layer, and the second barrier layer of the overlapping region is embedded in the conductive layer and between the conductive layer and the first barrier layer of the overlapping region.
Dependencies are inferred from the claim text.