Memory device and manufacturing method for manufacturing memory device

A memory device comprising:

• a substrate;
• a channel layer on a surface of the substrate;
• a gate electrode on the channel layer;
• a nitride layer between the channel layer and the gate electrode, the nitride layer containing silicon nitride having a dopant;
• a gate insulating layer between the gate electrode and the nitride layer;
• and
• a channel insulating layer between the channel layer and the nitride layer,
• wherein the nitride layer includes a first region adjacent to the gate electrode in a thickness direction of the nitride layer, a second region further from the gate electrode than the first region in the thickness direction of the nitride layer, and a third region between the first region and the second region,
• the dopant includes one or more of boron (B), aluminum (Al), gallium (Ga), indium (In), thallium (Tl), germanium (Ge), tin (Sn), lead (Pb), phosphorus (P), arsenic (As), antimony (Sb), or bismuth (Bi), and
• a dopant concentration CD2 of the second region is equal to or greater than each of a dopant concentration CD1 of the first region and a dopant concentration CD3 of the third region.

A memory device comprising:

• a substrate;
• a channel layer on a surface of the substrate;
• a gate electrode on the channel layer;
• a nitride layer between the channel layer and the gate electrode, the nitride layer containing silicon nitride having a dopant;
• a gate insulating layer between the gate electrode and the nitride layer;
• and
• a channel insulating layer between the channel layer and the nitride layer,
• wherein the nitride layer includes a first region adjacent to the gate electrode in a thickness direction of the nitride layer, a second region further from the gate electrode than the first region in the thickness direction of the nitride layer, and a third region between the first region and the second region,
• the dopant includes one or more of boron (B), aluminum (Al), gallium (Ga), indium (In), thallium (Tl), germanium (Ge), tin (Sn), lead (Pb), phosphorus (P), arsenic (As), antimony (Sb), or bismuth (Bi), and
• a ratio CD1/CD2 of a dopant concentration CD1 of the first region and a dopant concentration CD2 of the second region in a range of 0.8 to 1.2,
• a ratio CD3/CD1 of a dopant concentration CD3 of the third region and the dopant concentration CD1 of the first region is in a range of 0.8 to 1.2,
• a ratio CD3/CD2 of the dopant concentration CD3 of the third region and the dopant concentration CD2 of the second region is in a range of 0.8 to 1.2,
• the nitride layer contains doped germanium in an amount of 25 at % or less relative to a total element content of the nitride layer,
• a mole number of nitrogen contained in the nitride layer is greater than a mole number of silicon, and
• a thickness of the nitride layer is in a range of 1 nm to 10 nm.