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US 6,800,830 B2Granted
Chemistry for boron diffusion barrier layer and method of application in semiconductor device fabrication
AssigneeHitachi Kokusai Electric Inc.
InventorImad Mahawili
Life of this patent
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Abstract
A method of fabricating a semiconductor device includes providing a semiconductor substrate, forming an oxide layer in the substrate, and adding nitrogen atoms on top of the exposed surface of the oxide film to form a diffusion barrier.
Claims51
A method of fabricating a semiconductor device, said method comprising:
- providing a semiconductor substrate;
- forming an oxide film on the substrate, the film having an exposed surface and an interface surface at the substrate;
- and
- exposing the substrate to a plasma containing nitrogen gas and helium gas, said exposing comprising exposing the substrate to the gas plasma in the presence of silane gas in a pressure in a range of about 10 mTorr to 1000 mTorr wherein the nitrogen atoms form a diffusion barrier on the oxide film and wherein the nitrogen atoms do not penetrate said oxide film.
1 more element
A method of fabricating a semiconductor device, said method comprising:
- providing a semiconductor substrate;
- forming an oxide film in the substrate, the film having an exposed surface and an interface surface at the substrate;
- exposing the exposed surface to silane gas to form silane molecules on top of the exposed surface;
- and
- exposing the substrate to a plasma containing nitrogen gas at approximately room temperature wherein the nitrogen atoms react with the silane molecules to form a diffusion barrier.
2 more elements
A method of fabricating a semiconductor device, said method comprising:
- providing a processing apparatus having a processing chamber;
- providing a semiconductor substrate in the processing chamber;
- forming an oxide film in the substrate, the oxide film having an exposed surface and an interface surface with the substrate;
- injecting a plasma containing nitrogen gas into the processing chamber in the presence of silane gas to form a diffusion barrier on top of the oxide film, whereby the nitrogen atoms do not penetrate the oxide film;
- and
- wherein said injecting comprises injecting the plasma into the processing chamber at approximately room temperature.
3 more elements
A method of fabricating a semiconductor device, said method comprising:
- providing a semiconductor substrate having a surface;
- exposing the surface of the substrate to a plasma containing nitrogen gas wherein nitrogen atoms are added on top of the surface of the substrate;
- and
- forming an oxide film in the substrate over the nitrogen atoms, wherein the nitrogen atoms are incorporated into the oxide film to form a diffusion barrier.
1 more element
A method of fabricating a semiconductor device, said method comprising:
- providing a processing apparatus having a processing chamber;
- providing a semiconductor substrate in the processing chamber;
- forming an oxide film in the substrate, the oxide film having an exposed surface and an interface surface;
- injecting a plasma containing a nitrogen gas into the processing chamber, said injecting including injecting the plasma in the presence of silane gas wherein nitrogen atoms are added to the exposed surface to form a diffusion barrier on the exposed surface of the oxide film;
- and
- wherein said injecting comprising injecting the plasma into the processing chamber in a temperature of about 25° C.
3 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- an oxide film formed in said substrate, the oxide film having an interface surface and an exposed surface;
- and
- a diffusion barrier formed on top of said exposed surface wherein the molecules forming said diffusion barrier do not penetrate said oxide film, and said diffusion barrier including nitrogen atoms and silane atoms.
1 more element
Dependencies are inferred from the claim text.