H10D 64/691
Comprising metallic compounds
Official title: {comprising metallic compounds, e.g. metal oxides or metal silicates (insulators comprising nitrogen H10D64/693)}
H10D64/691 (Comprising metallic compounds) appears on 6,018 US grants and 6,898 published applications in this corpus.
Search patents in H10D- Granted patents
- 6,018
- Published applications
- 6,898
- Assignees
- 668
- Inventors
- 7,134
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 3 | 0 |
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 4 | 0 |
| 1986 | 2 | 0 |
| 1987 | 0 | 0 |
| 1988 | 2 | 0 |
| 1989 | 3 | 0 |
| 1990 | 6 | 0 |
| 1991 | 5 | 0 |
| 1992 | 3 | 0 |
| 1993 | 2 | 0 |
| 1994 | 5 | 0 |
| 1995 | 7 | 0 |
| 1996 | 9 | 0 |
| 1997 | 7 | 0 |
| 1998 | 14 | 0 |
| 1999 | 26 | 0 |
| 2000 | 44 | 0 |
| 2001 | 64 | 24 |
| 2002 | 82 | 101 |
| 2003 | 110 | 157 |
| 2004 | 144 | 197 |
| 2005 | 139 | 262 |
| 2006 | 168 | 275 |
| 2007 | 140 | 222 |
| 2008 | 144 | 213 |
| 2009 | 144 | 237 |
| 2010 | 205 | 225 |
| 2011 | 204 | 235 |
| 2012 | 199 | 300 |
| 2013 | 254 | 341 |
| 2014 | 332 | 346 |
| 2015 | 384 | 474 |
| 2016 | 460 | 466 |
| 2017 | 412 | 377 |
| 2018 | 352 | 336 |
| 2019 | 359 | 376 |
| 2020 | 392 | 414 |
| 2021 | 273 | 282 |
| 2022 | 242 | 228 |
| 2023 | 206 | 260 |
| 2024 | 205 | 218 |
| 2025 | 172 | 187 |
| 2026 | 79 | 145 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device with voltage resistant structure22 Sep 2026US 12,745,431 B2Rohm Co., Ltd.
- Semiconductor device structure having gate dielectric layers with different dielectric compositions and method of forming the same15 Sep 2026US 12,740,136 B2Mediatek Inc.
- Semiconductor device structure with boron- and nitrogen-containing material and method for forming the same8 Sep 2026US 12,733,222 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Controlled doping in a gate dielectric layer1 Sep 2026US 12,727,186 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with voltage resistant structure1 Sep 2026US 12,727,212 B2Rohm Co., Ltd.
- Controlled doping in a gate dielectric layer8 Oct 2026US 2026/0313932 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method of the same8 Oct 2026US 2026/0313974 A1Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor device structure and method for forming the same8 Oct 2026US 2026/0313987 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Selective high-k formation in gate-last process8 Oct 2026US 2026/0314004 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and methods of manufacturing the semiconductor device8 Oct 2026US 2026/0314019 A1SK hynix Inc.
Most cited
By later US patents
- Transistor and semiconductor device4,015US 6,727,522 B1Japan Science and Technology Corporation · 2004
- Transistor and semiconductor device3,984US 7,064,346 B2Japan Science and Technology Agency · 2006
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Zirconium and/or hafnium oxynitride gate dielectric829US 6,013,553 ATexas Instruments Incorporated · 2000
- Atomic layer-deposited LaAlO3 films for gate dielectrics693US 7,045,430 B2Micron Technology, Inc. · 2006