H10D 64/693
The insulator comprising nitrogen
Official title: {the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials}
H10D64/693 (The insulator comprising nitrogen) appears on 3,757 US grants and 3,843 published applications in this corpus.
Search patents in H10D- Granted patents
- 3,757
- Published applications
- 3,843
- Assignees
- 558
- Inventors
- 5,118
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 6 | 0 |
| 1978 | 3 | 0 |
| 1979 | 2 | 0 |
| 1980 | 3 | 0 |
| 1981 | 8 | 0 |
| 1982 | 3 | 0 |
| 1983 | 4 | 0 |
| 1984 | 1 | 0 |
| 1985 | 3 | 0 |
| 1986 | 5 | 0 |
| 1987 | 4 | 0 |
| 1988 | 5 | 0 |
| 1989 | 5 | 0 |
| 1990 | 4 | 0 |
| 1991 | 3 | 0 |
| 1992 | 5 | 0 |
| 1993 | 11 | 0 |
| 1994 | 17 | 0 |
| 1995 | 11 | 0 |
| 1996 | 16 | 0 |
| 1997 | 21 | 0 |
| 1998 | 30 | 0 |
| 1999 | 66 | 0 |
| 2000 | 88 | 0 |
| 2001 | 112 | 35 |
| 2002 | 103 | 153 |
| 2003 | 120 | 168 |
| 2004 | 185 | 231 |
| 2005 | 148 | 235 |
| 2006 | 138 | 179 |
| 2007 | 123 | 135 |
| 2008 | 105 | 145 |
| 2009 | 106 | 118 |
| 2010 | 102 | 103 |
| 2011 | 112 | 104 |
| 2012 | 76 | 144 |
| 2013 | 118 | 164 |
| 2014 | 172 | 184 |
| 2015 | 207 | 271 |
| 2016 | 263 | 245 |
| 2017 | 208 | 201 |
| 2018 | 217 | 174 |
| 2019 | 182 | 180 |
| 2020 | 166 | 169 |
| 2021 | 124 | 121 |
| 2022 | 104 | 94 |
| 2023 | 80 | 79 |
| 2024 | 70 | 65 |
| 2025 | 51 | 70 |
| 2026 | 36 | 76 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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Most cited
By later US patents
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Zirconium and/or hafnium oxynitride gate dielectric829US 6,013,553 ATexas Instruments Incorporated · 2000
- Atomic layer-deposited LaAlO3 films for gate dielectrics693US 7,045,430 B2Micron Technology, Inc. · 2006
- Method of forming a multilayer dielectric stack677US 6,627,503 B2Sharp Laboratories of America, Inc. · 2003
- Atomic layer-deposited hafnium aluminum oxide654US 7,135,421 B2Micron Technology, Inc. · 2006