H10D 64/689
Having ferroelectric layers
Official title: {having ferroelectric layers}
H10D64/689 (Having ferroelectric layers) appears on 1,153 US grants and 1,582 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,153
- Published applications
- 1,582
- Assignees
- 236
- Inventors
- 1,837
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 3 | 0 |
| 1996 | 4 | 0 |
| 1997 | 3 | 0 |
| 1998 | 4 | 0 |
| 1999 | 4 | 0 |
| 2000 | 12 | 0 |
| 2001 | 14 | 8 |
| 2002 | 14 | 19 |
| 2003 | 17 | 26 |
| 2004 | 17 | 13 |
| 2005 | 14 | 13 |
| 2006 | 3 | 9 |
| 2007 | 9 | 13 |
| 2008 | 8 | 10 |
| 2009 | 3 | 4 |
| 2010 | 8 | 10 |
| 2011 | 5 | 5 |
| 2012 | 5 | 7 |
| 2013 | 5 | 8 |
| 2014 | 8 | 13 |
| 2015 | 8 | 20 |
| 2016 | 20 | 34 |
| 2017 | 27 | 27 |
| 2018 | 37 | 53 |
| 2019 | 56 | 104 |
| 2020 | 86 | 141 |
| 2021 | 105 | 165 |
| 2022 | 128 | 193 |
| 2023 | 144 | 222 |
| 2024 | 158 | 222 |
| 2025 | 135 | 154 |
| 2026 | 84 | 89 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Highly integrated semiconductor device6 Oct 2026US 12,757,404 B2Samsung Electronics Co., Ltd.
- Field effect transistor, capacitor, and electronic apparatus including domain-controlled ferroelectric material6 Oct 2026US 12,757,449 B2Samsung Electronics Co., Ltd.
- Integrated circuit structures with cavity spacers6 Oct 2026US 12,757,473 B2Intel Corporation
- Ferroelectric tunnel junction devices for low voltage and low temperature operation6 Oct 2026US 12,757,474 B2Intel Corporation
- Ferroelectric oxide- and ferroelectric monochalcogenide-based capacitors22 Sep 2026US 12,745,403 B2Intel Corporation
- Fabrication Method for a Memory Structure Including High Density Three-Dimensional NOR Memory Strings of Junctionless Ferroelectric Storage Transistors8 Oct 2026US 2026/0311761 A1Sunrise Memory Corporation
- Ferroelectric memory device1 Oct 2026US 2026/0304778 A1Samsung Electronics Co., Ltd.
- Method of manufacturing three-dimensional ferroelectric memory devices1 Oct 2026US 2026/0304779 A1Samsung Electronics Co., Ltd.
- Semiconductor device1 Oct 2026US 2026/0304847 A1SK hynix Inc.
- Semiconductor structure and method for manufacturing the same24 Sep 2026US 2026/0293177 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Use of high-K dielectric material in modified ONO structure for semiconductor devices174US 6,642,573 B1Advanced Micro Devices, Inc. · 2003
- Method of forming high-dielectric-constant material electrodes comprising sidewall spacers151US 5,489,548 ATexas Instruments Incorporated · 1996
- Process for preparing ferroelectric thin films111US 6,387,712 B1TDK Corporation · 2002
- Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers106US 6,858,906 B2Samsung Electronics Co., Ltd. · 2005
- Semiconductor device with ferroelectric and method of manufacturing the same104US 5,293,510 ARamtron International Corporation · 1994