US 2026/0304847 A1 · SEMICONDUCTOR DEVICE

Abstract

According to embodiments of the present disclosure, a semiconductor device includes a first electrode and a second electrode, and a dielectric layer disposed between the first electrode and the second electrode. The dielectric layer includes a first ferroelectric layer; a second ferroelectric layer disposed between the first ferroelectric layer and the second electrode and having a domain different from a domain of the first ferroelectric layer; and a domain separation layer disposed between the first ferroelectric layer and the second ferroelectric layer and containing a first dopant and a metal element. The first dopant includes a metal cation having a valency different from a valency of the metal element.

Claims20

Dependent claims

A semiconductor device comprising:

a first electrode and a second electrode;
and
a dielectric layer disposed between the first electrode and the second electrode,
wherein the dielectric layer comprises:
a first ferroelectric layer;
a second ferroelectric layer disposed between the first ferroelectric layer and the second electrode, the second ferroelectric layer having a domain different from a domain of the first ferroelectric layer;
and
a domain separation layer disposed between the first ferroelectric layer and the second ferroelectric layer, the domain separation layer containing a first dopant and a metal element,
wherein the first dopant comprises a metal cation having a valency different from a valency of the metal element.

6 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims20