Process for preparing ferroelectric thin films
AssigneeTDK Corporation
InventorsYoshihiko Yano, Takao Noguchi
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Abstract
In a film structure comprising a ferroelectric thin film formed on a substrate, the ferroelectric thin film contains a rare earth element (Rn), Pb, Ti, and O in an atomic ratio in the range: 0.8≦(Pb+Rn)/Ti≦1.3 and 0.5≦Pb/(Pb+Rn)≦0.99, has a perovskite type crystal structure, and is of (001) unidirectional orientation or a mixture of (001) orientation and (100) orientation. The ferroelectric thin film can be formed on a silicon (100) substrate, typically by evaporating lead oxide and TiOx in a vacuum chamber while introducing an oxidizing gas therein.
Claims10
A process for preparing a ferroelectric thin film of oxides containing at least Pb and Ti on a substrate by a multi-source evaporation method, comprising the steps of:
- placing at least lead oxide and TiOx wherein 1≦×≦1.9 as sources in an evaporation chamber, and
- evaporating the sources in the chamber while introducing an oxidizing gas therein.
Dependencies are inferred from the claim text.