H10D 64/251
Source or drain electrodes for field-effect devices
Official title: {Source or drain electrodes for field-effect devices}
H10D64/251 (Source or drain electrodes for field-effect devices) appears on 11,149 US grants and 13,929 published applications in this corpus.
Search patents in H10D- Granted patents
- 11,149
- Published applications
- 13,929
- Assignees
- 1,216
- Inventors
- 13,125
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 7 | 0 |
| 1978 | 3 | 0 |
| 1979 | 5 | 0 |
| 1980 | 7 | 0 |
| 1981 | 14 | 0 |
| 1982 | 6 | 0 |
| 1983 | 5 | 0 |
| 1984 | 10 | 0 |
| 1985 | 19 | 0 |
| 1986 | 17 | 0 |
| 1987 | 13 | 0 |
| 1988 | 26 | 0 |
| 1989 | 22 | 0 |
| 1990 | 24 | 0 |
| 1991 | 12 | 0 |
| 1992 | 31 | 0 |
| 1993 | 38 | 0 |
| 1994 | 32 | 0 |
| 1995 | 47 | 0 |
| 1996 | 38 | 0 |
| 1997 | 72 | 0 |
| 1998 | 94 | 0 |
| 1999 | 109 | 0 |
| 2000 | 125 | 0 |
| 2001 | 111 | 35 |
| 2002 | 109 | 148 |
| 2003 | 135 | 124 |
| 2004 | 128 | 141 |
| 2005 | 99 | 197 |
| 2006 | 130 | 203 |
| 2007 | 113 | 201 |
| 2008 | 122 | 230 |
| 2009 | 152 | 282 |
| 2010 | 229 | 276 |
| 2011 | 255 | 318 |
| 2012 | 260 | 403 |
| 2013 | 375 | 469 |
| 2014 | 466 | 568 |
| 2015 | 568 | 664 |
| 2016 | 684 | 745 |
| 2017 | 719 | 707 |
| 2018 | 677 | 630 |
| 2019 | 678 | 690 |
| 2020 | 672 | 732 |
| 2021 | 564 | 696 |
| 2022 | 546 | 954 |
| 2023 | 576 | 1165 |
| 2024 | 677 | 1096 |
| 2025 | 817 | 1362 |
| 2026 | 507 | 893 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10D 64/256For lateral devices wherein the source or drain electrodes are recessed in4,230
- H10D 64/252For vertical or pseudo-vertical devices2,925
- H10D 64/258Characterised by the relative positions of the source or drain electrodes with2,817
- H10D 64/257For lateral devices wherein the source or drain electrodes are characterised by1,554
- H10D 64/254For lateral devices wherein the source or drain electrodes extend entirely through989
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Most cited
By later US patents
- Contact structure of semiconductor device1,648US 9,105,490 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Silicide regions in vertical gate all around (VGAA) devices and methods of forming same841US 9,412,817 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Self aligned contact scheme568US 9,548,366 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Wrap-around contact550US 9,443,769 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016