H10D 64/256
For lateral devices wherein the source or drain electrodes are recessed in
Official title: {for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673)}
H10D64/256 (For lateral devices wherein the source or drain electrodes are recessed in) appears on 4,230 US grants and 5,645 published applications in this corpus.
Search patents in H10D- Granted patents
- 4,230
- Published applications
- 5,645
- Assignees
- 632
- Inventors
- 5,934
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 3 | 0 |
| 1978 | 2 | 0 |
| 1979 | 0 | 0 |
| 1980 | 5 | 0 |
| 1981 | 4 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 4 | 0 |
| 1986 | 3 | 0 |
| 1987 | 1 | 0 |
| 1988 | 4 | 0 |
| 1989 | 8 | 0 |
| 1990 | 7 | 0 |
| 1991 | 6 | 0 |
| 1992 | 7 | 0 |
| 1993 | 7 | 0 |
| 1994 | 12 | 0 |
| 1995 | 17 | 0 |
| 1996 | 15 | 0 |
| 1997 | 22 | 0 |
| 1998 | 12 | 0 |
| 1999 | 25 | 0 |
| 2000 | 30 | 0 |
| 2001 | 33 | 9 |
| 2002 | 34 | 54 |
| 2003 | 48 | 46 |
| 2004 | 43 | 61 |
| 2005 | 44 | 69 |
| 2006 | 44 | 86 |
| 2007 | 42 | 83 |
| 2008 | 55 | 120 |
| 2009 | 65 | 156 |
| 2010 | 121 | 178 |
| 2011 | 151 | 184 |
| 2012 | 145 | 229 |
| 2013 | 210 | 242 |
| 2014 | 266 | 293 |
| 2015 | 251 | 249 |
| 2016 | 271 | 251 |
| 2017 | 230 | 245 |
| 2018 | 208 | 228 |
| 2019 | 237 | 236 |
| 2020 | 231 | 220 |
| 2021 | 172 | 251 |
| 2022 | 175 | 336 |
| 2023 | 204 | 484 |
| 2024 | 252 | 395 |
| 2025 | 321 | 546 |
| 2026 | 178 | 394 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- 3D source and drain contacts tuned for vertically stacked PMOS and NMOS22 Sep 2026US 12,745,428 B2Intel Corporation
- Semiconductor device with voltage resistant structure22 Sep 2026US 12,745,431 B2Rohm Co., Ltd.
- Wide band gap semiconductor device with surface insulating film22 Sep 2026US 12,745,445 B2Rohm Co., Ltd.
- Test vehicle and test method for microelectronic devices22 Sep 2026US 12,745,609 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Electronic component, method for the control thereof, and method for producing an electronic component15 Sep 2026US 12,740,090 B2Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V.
- Semiconductor device structure with conductive contact8 Oct 2026US 2026/0313986 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ohmic electrode for two-dimensional carrier gas (2dcg) semiconductor device8 Oct 2026US 2026/0314018 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices8 Oct 2026US 2026/0314043 A1Samsung Electronics Co., Ltd.
- Integrated circuit device8 Oct 2026US 2026/0314048 A1Samsung Electronics Co., Ltd.
- Semiconductor device including cutting pattern8 Oct 2026US 2026/0314057 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Film formation apparatus488US 8,945,339 B2Tokyo Electron Limited · 2015
- Power semiconductor devices and methods of manufacture273US 7,345,342 B2Fairchild Semiconductor Corporation · 2008
- Methods of fabricating nitride-based transistors with a cap layer and a recessed gate237US 7,238,560 B2Cree, Inc. · 2007
- Device structure and method for reducing silicide encroachment232US 6,765,273 B1Intel Corporation · 2004
- Field effect-controllable semiconductor component211US 5,973,360 ASiemens Aktiengesellschaft · 1999