H10D 64/2565
Wherein the source or drain regions are on a top side of
Official title: {wherein the source or drain regions are on a top side of the semiconductor bodies and the recessed source or drain electrodes are on a bottom side of the semiconductor bodies}
H10D64/2565 (Wherein the source or drain regions are on a top side of) appears on 27 US grants and 247 published applications in this corpus.
Search patents in H10D- Granted patents
- 27
- Published applications
- 247
- Assignees
- 17
- Inventors
- 549
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2012 | 1 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 1 |
| 2015 | 1 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 0 |
| 2018 | 1 | 1 |
| 2019 | 0 | 1 |
| 2020 | 0 | 0 |
| 2021 | 1 | 3 |
| 2022 | 1 | 5 |
| 2023 | 4 | 7 |
| 2024 | 6 | 20 |
| 2025 | 9 | 115 |
| 2026 | 3 | 94 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Placeholder with dielectric liner protection to prevent direct backside contact (DBC) from shorting to gate25 Aug 2026US 12,720,853 B2International Business Machines Corporation
- Semiconductor device and method of manufacturing thereof19 May 2026US 12,635,189 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device structure and methods of forming the same17 Feb 2026US 12,557,339 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Transistors with backside source/drain contact and spacer23 Dec 2025US 12,506,049 B2International Business Machines Corporation
- Semiconductor device with backside power rail and methods of fabrication thereof23 Dec 2025US 12,506,079 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including a buried pattern1 Oct 2026US 2026/0304933 A1Samsung Electronics Co., Ltd.
- Semiconductor device and method of manufacturing thereof20 Aug 2026US 2026/0247666 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device13 Aug 2026US 2026/0239709 A1Samsung Electronics Co., Ltd.
- Semiconductor device and method for manufacturing the same6 Aug 2026US 2026/0231755 A1Samsung Electronics Co., Ltd.
- Semiconductor structure and method for manufacturing the same16 Jul 2026US 2026/0206244 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Selective liner on backside via and method thereof5US 11,342,413 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2022
- Backside via with a low-k spacer5US 11,615,987 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2023
- Nanosheet eDRAM3US 10,937,789 B2International Business Machines Corporation · 2021
- Drain side recess for back-side power rail device3US 11,658,220 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2023
- Backside via with a low-k spacer3US 12,068,200 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2024