Drain side recess for back-side power rail device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHuan-Chieh Su, Cheng-Chi Chuang, Chih-Hao Wang, Kuo-Cheng Chiang
Life of this patent
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Abstract
A semiconductor transistor device includes a channel structure, a gate structure, a first source/drain epitaxial structure, a second source/drain epitaxial structure, a gate contact, and a back-side source/drain contact. The gate structure wraps around the channel structure. The first source/drain epitaxial structure and the second source/drain epitaxial structure are disposed on opposite endings of the channel structure. The gate contact is disposed on the gate structure. The back-side source/drain contact is disposed under the first source/drain epitaxial structure. The second source/drain epitaxial structure has a concave bottom surface.
Claims20
A semiconductor transistor device, comprising:
- a channel structure;
- a gate structure wrapping around the channel structure;
- a first source/drain epitaxial structure and a second source/drain epitaxial structure disposed on opposite endings of the channel structure, the second source/drain epitaxial structure having a concave bottom surface;
- and
- a back-side source/drain contact disposed under the first source/drain epitaxial structure;
- and
- a first dielectric liner disposed along a sidewall of the back-side source/drain contact.
A semiconductor transistor device, comprising:
- a channel structure;
- a gate structure wrapping around the channel structure;
- a first source/drain epitaxial structure and a second source/drain epitaxial structure disposed on opposite endings of the channel structure, the second source/drain epitaxial structure having a bottom surface locating higher than a bottom surface of the gate structure;
- a gate contact disposed on the gate structure;
- and
- a back-side source/drain contact disposed under and contacting the first source/drain epitaxial structure;
- and
- a back-side dielectric cap disposed under and extended along the second source/drain epitaxial structure;
- wherein the back-side dielectric cap laterally extends under and contacting the gate structure.
A semiconductor transistor device, comprising:
- a channel structure comprising a plurality of semiconductor layers one stacked over another;
- a metal gate structure disposed over the channel structure and separating the plurality of semiconductor layers;
- inner spacers disposed on opposite sides of the plurality of semiconductor layers;
- a first source/drain epitaxial structure and a second source/drain epitaxial structure disposed on opposite endings of the channel structure, the second source/drain epitaxial structure having a recessed bottom surface with a concave shape;
- a back-side source/drain contact disposed under and contacting the first source/drain epitaxial structure;
- and
- a back-side dielectric cap disposed at a bottom surface of the metal gate structure and the recessed bottom surface of the second source/drain epitaxial structure.
Dependencies are inferred from the claim text.