Back to results
US 12,506,049 B2Granted
Transistors with backside source/drain contact and spacer
AssigneeInternational Business Machines Corporation
InventorsTsung-Sheng Kang, Tao Li, Ruilong Xie, Chih-Chao Yang
Life of this patent
Estimating the term…
Abstract
A semiconductor structure includes a first backside power rail disposed on a portion of a sidewall and a bottom surface of a backside source/drain contact, a first sidewall spacer disposed on another sidewall of the backside source/drain contact, and a backside signal line disposed on the first sidewall spacer and separated from the backside source/drain contact.
Claims20
A semiconductor structure, comprising:
- a first backside power rail disposed on a portion of a sidewall and a bottom surface of a backside source/drain contact;
- a first sidewall spacer disposed on another sidewall of the backside source/drain contact;
- and
- a backside signal line disposed on the first sidewall spacer and separated from the backside source/drain contact and the first backside power rail.
1 more element
A semiconductor structure, comprising:
- a backside source/drain contact connected to a first backside power rail;
- and
- a gate structure connected to a backside signal line;
- wherein the backside source/drain contact is separated from the backside signal line and separated from the backside signal line by a first sidewall spacer.
1 more element
A semiconductor structure, comprising:
- a first nanosheet field-effect transistor device comprising a source/drain region and a first gate structure;
- a second nanosheet field-effect transistor device adjacent the first field-effect nanosheet transistor device, the second nanosheet field-effect transistor device comprising a second gate structure;
- a backside source/drain contact disposed on the source/drain region of the first nanosheet field-effect transistor device;
- a backside signal line disposed between the first nanosheet field-effect transistor device and the second nanosheet field-effect transistor device;
- a backside signal line via connecting the backside signal line to the first gate structure and the second gate structure;
- a first sidewall spacer disposed between the backside source/drain contact and the backside signal line;
- and
- a first backside power rail connected to the backside source/drain contact;
- wherein the backside signal line is disposed between the first sidewall spacer and a second sidewall spacer.
6 more elements
Dependencies are inferred from the claim text.