H10D 64/23
Electrodes carrying the current to be rectified, amplified, oscillated or switched
Official title: Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
H10D64/23 (Electrodes carrying the current to be rectified, amplified, oscillated or switched) appears on 12,738 US grants and 15,717 published applications in this corpus.
Search patents in H10D- Granted patents
- 12,738
- Published applications
- 15,717
- Assignees
- 1,384
- Inventors
- 14,980
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 7 | 0 |
| 1977 | 15 | 0 |
| 1978 | 12 | 0 |
| 1979 | 10 | 0 |
| 1980 | 17 | 0 |
| 1981 | 21 | 0 |
| 1982 | 15 | 0 |
| 1983 | 10 | 0 |
| 1984 | 13 | 0 |
| 1985 | 22 | 0 |
| 1986 | 21 | 0 |
| 1987 | 17 | 0 |
| 1988 | 32 | 0 |
| 1989 | 33 | 0 |
| 1990 | 38 | 0 |
| 1991 | 24 | 0 |
| 1992 | 40 | 0 |
| 1993 | 45 | 0 |
| 1994 | 41 | 0 |
| 1995 | 57 | 0 |
| 1996 | 48 | 0 |
| 1997 | 78 | 0 |
| 1998 | 98 | 0 |
| 1999 | 117 | 0 |
| 2000 | 134 | 0 |
| 2001 | 119 | 47 |
| 2002 | 124 | 168 |
| 2003 | 161 | 143 |
| 2004 | 149 | 169 |
| 2005 | 121 | 237 |
| 2006 | 151 | 243 |
| 2007 | 134 | 230 |
| 2008 | 147 | 265 |
| 2009 | 163 | 299 |
| 2010 | 256 | 298 |
| 2011 | 282 | 341 |
| 2012 | 281 | 432 |
| 2013 | 402 | 506 |
| 2014 | 494 | 603 |
| 2015 | 618 | 746 |
| 2016 | 763 | 843 |
| 2017 | 820 | 804 |
| 2018 | 752 | 727 |
| 2019 | 793 | 858 |
| 2020 | 804 | 872 |
| 2021 | 679 | 820 |
| 2022 | 651 | 1074 |
| 2023 | 673 | 1311 |
| 2024 | 757 | 1214 |
| 2025 | 904 | 1488 |
| 2026 | 575 | 979 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Half-bridge circuit using monolithic flip-chip GAN power devices6 Oct 2026US 12,756,203 B2Navitas Semiconductor Limited
- Vertical transistors with backside power delivery6 Oct 2026US 12,757,371 B2Apple Inc.
- Enhancement-mode HEMT and manufacturing process of the same6 Oct 2026US 12,757,427 B2STMicroelectronics S,r.l.
- Semiconductor device including multiple spacers and method for preparing the same6 Oct 2026US 12,757,429 B2Nanya Technology Corporation
- Semiconductor device and method of fabricating the same6 Oct 2026US 12,757,459 B2Samsung Electronics Co., Ltd.
- Varying the po space in semiconductor layouts8 Oct 2026US 2026/0313864 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacturing same8 Oct 2026US 2026/0313941 A1Samsung Electronics Co., Ltd.
- FINFET Devices with Backside Power Rail and Backside Self-Aligned Via8 Oct 2026US 2026/0313945 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Source/drain channel interface with nitrogen-containing oxide8 Oct 2026US 2026/0313973 A1Zinite Corporation
- Semiconductor device structure with conductive contact8 Oct 2026US 2026/0313986 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Contact structure of semiconductor device1,648US 9,105,490 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Silicide regions in vertical gate all around (VGAA) devices and methods of forming same841US 9,412,817 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Self aligned contact scheme568US 9,548,366 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2017