H10D 64/231
Emitter or collector electrodes for bipolar transistors
Official title: {Emitter or collector electrodes for bipolar transistors}
H10D64/231 (Emitter or collector electrodes for bipolar transistors) appears on 889 US grants and 879 published applications in this corpus.
Search patents in H10D- Granted patents
- 889
- Published applications
- 879
- Assignees
- 252
- Inventors
- 1,422
- Latest grant
- 14 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 4 | 0 |
| 1978 | 3 | 0 |
| 1979 | 2 | 0 |
| 1980 | 6 | 0 |
| 1981 | 6 | 0 |
| 1982 | 4 | 0 |
| 1983 | 2 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 4 | 0 |
| 1987 | 2 | 0 |
| 1988 | 4 | 0 |
| 1989 | 6 | 0 |
| 1990 | 13 | 0 |
| 1991 | 7 | 0 |
| 1992 | 10 | 0 |
| 1993 | 8 | 0 |
| 1994 | 8 | 0 |
| 1995 | 9 | 0 |
| 1996 | 7 | 0 |
| 1997 | 6 | 0 |
| 1998 | 2 | 0 |
| 1999 | 4 | 0 |
| 2000 | 6 | 0 |
| 2001 | 5 | 10 |
| 2002 | 8 | 12 |
| 2003 | 14 | 10 |
| 2004 | 10 | 19 |
| 2005 | 12 | 22 |
| 2006 | 15 | 24 |
| 2007 | 9 | 17 |
| 2008 | 11 | 22 |
| 2009 | 7 | 4 |
| 2010 | 15 | 14 |
| 2011 | 16 | 12 |
| 2012 | 10 | 14 |
| 2013 | 17 | 26 |
| 2014 | 17 | 16 |
| 2015 | 32 | 63 |
| 2016 | 56 | 69 |
| 2017 | 66 | 59 |
| 2018 | 53 | 52 |
| 2019 | 71 | 99 |
| 2020 | 73 | 64 |
| 2021 | 54 | 62 |
| 2022 | 50 | 45 |
| 2023 | 57 | 58 |
| 2024 | 37 | 38 |
| 2025 | 25 | 31 |
| 2026 | 22 | 17 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device14 Jul 2026US 12,684,837 B2Kabushiki Kaisha Toshiba
- Structure and related method for source/drain terminal within subcollector14 Jul 2026US 12,684,838 B2GLOBALFOUNDRIES U. S. Inc.
- Semiconductor device14 Jul 2026US 12,684,860 B2Kabushiki Kaisha Toshiba
- RC-IGBT and manufacturing method of RC-IGBT30 Jun 2026US 12,672,343 B2Infineon Technologies Austria AG
- Methods and systems of operating a double-sided double-base bipolar junction transistor23 Jun 2026US 12,665,593 B2Ideal Power Inc.
- Semiconductor device and method of manufacturing the same24 Sep 2026US 2026/0293259 A1Renesas Electronics Corporation
- Semiconductor device20 Aug 2026US 2026/0247682 A1Denso Corporation
- Structure with emitter contact wider than emitter terminal and related method9 Jul 2026US 2026/0198026 A1GLOBALFOUNDRIES U. S. Inc.
- Semiconductor processing for bipolar junction transistor (bjt)25 Jun 2026US 2026/0181928 A1
- Electrostatic discharge bipolar device with collector and emitter ballasting18 Jun 2026US 2026/0173536 A1International Business Machines Corporation
Most cited
By later US patents
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Field plate in heterojunction bipolar transistor with improved break-down voltage512US 9,324,846 B1Globalfoundries Inc. · 2016
- Stacked devices105US 6,020,250 AInternational Business Machines Corporation · 2000
- Process for forming planarized, air-bridge interconnects on a semiconductor substrate86US 5,171,713 A1992
- Stacked devices60US 5,583,368 AInternational Business Machines Corporation · 1996