US 12,684,860 B2 · Semiconductor device

Abstract

According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the second conductivity type, and a second electrode. The third semiconductor region is located on the second semiconductor region, and has a higher second-conductivity-type impurity concentration than the second semiconductor region. The second electrode is located on the third semiconductor region. The second electrode includes a first part and a second part. The first part is located in the second semiconductor region. The second part is positioned on the first part, and contacts the third semiconductor region in a second direction perpendicular to a first direction from the first electrode toward the first semiconductor region. A length of the first part is greater than a length of the second part in the second direction.

Claims17

Dependent claims

A semiconductor device, comprising:

a first electrode;
a first semiconductor region located on the first electrode, the first semiconductor region being of a first conductivity type;
a second semiconductor region located on the first semiconductor region, the second semiconductor region being of a second conductivity type;
a third semiconductor region located on the second semiconductor region, the third semiconductor region being of the second conductivity type, a second-conductivity-type impurity concentration of the third semiconductor region being greater than a second-conductivity-type impurity concentration of the second semiconductor region;
and
a second electrode located on the third semiconductor region, the second electrode including
a first part located in the second semiconductor region, and
a second part positioned on the first part, the second part contacting the third semiconductor region in a second direction perpendicular to a first direction, the first direction being from the first electrode toward the first semiconductor region,
a length in the second direction of the first part being greater than a length in the second direction of the second part.

6 more elements

A semiconductor device, comprising:

a first electrode;
a first semiconductor region located on the first electrode, the first semiconductor region being of a first conductivity type;
a second semiconductor region located on the first semiconductor region, the second semiconductor region being of a second conductivity type;
and
a second electrode located on the second semiconductor region, the second electrode including
a first part located in the second semiconductor region, and
a second part positioned on the first part,
a length of the first part in a second direction perpendicular to a first direction being greater than a length of the second part in the second direction,
the first direction being from the first electrode toward the first semiconductor region,
a Schottky junction being formed between the first part and the second semiconductor region.

7 more elements

A semiconductor device, comprising:

a first electrode;
a first semiconductor region located on the first electrode, the first semiconductor region being of a first conductivity type;
a second semiconductor region located on the first semiconductor region, a second-conductivity-type impurity concentration of the second semiconductor region being not less than 1.0×1016 atoms/cm3 and not more than 1.0×1018 atoms/cm3;
and
a second electrode located on the second semiconductor region, the second electrode including
a first part contacting the second semiconductor region, and
a second part positioned on the first part,
a length of the first part in a second direction perpendicular to a first direction being greater than a length of the second part in the second direction,
the first direction being from the first electrode toward the first semiconductor region.

6 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims17