Semiconductor device

A semiconductor device, comprising:

• a first electrode including a first face;
• a second electrode including a first conductive region and a first conductive portion, the first conductive portion being electrically connected to the first conductive region;
• a first conductive member provided between the first face and the first conductive region;
• a semiconductor member provided between the first face and the second electrode, the semiconductor member including
• a first semiconductor region of a first conductive type, the first semiconductor region including a first partial region, a second partial region, and a third partial region, the first partial region being located between the first face and the first conductive member in a first direction perpendicular to the first face, a second direction from the first partial region to the second partial region crossing the first direction, the second partial region being located between the first face and the third partial region in the first direction, a direction from the first conductive member to the third partial region being along the second direction,
• a second semiconductor region of a second conductive type, a part of the second semiconductor region being provided between a part of the first conductive member and the first conductive portion,
• a third semiconductor region of the second conductive type, the second semiconductor region being located between the third partial region and the third semiconductor region in the first direction, a direction from another part of the first conductive member to the third semiconductor region being along the second direction, a third carrier concentration of the second conductive type in the third semiconductor region being higher than a second carrier concentration of the second conductive type in the second semiconductor region,
• a fourth semiconductor region of the first conductive type, the fourth semiconductor region being located between the first face and the first partial region, and between the first face and the second partial region, and
• a fifth semiconductor region of the first conductive type, the fifth semiconductor region being located between at least a part of the second semiconductor region and at least a part of the first conductive portion in the first direction;
• a first insulating member including a first insulating region, the first insulating region being provided between the semiconductor member and the first conductive member;
• and
• a third electrode, wherein:
• the second electrode includes a second conductive region and a second conductive portion;
• the second conductive portion is electrically connected to the second conductive region, a direction from the first conductive region to the second conductive region being along the second direction;
• the third electrode is located between the first face and the second conductive region, and the semiconductor member further includes a sixth semiconductor region of the second conductive type, a seventh semiconductor region of the first conductive type, and an eighth semiconductor region of the second conductive type;
• the first semiconductor region includes a fourth partial region, a fifth partial region, and a sixth partial region, the fourth partial region being located between the first face and the third electrode in the first direction, a direction from the fourth partial region to the fifth partial region being along the second direction, the fifth partial region being located between the first face and the sixth partial region in the first direction, a direction from the third electrode to the sixth partial region being along the second direction;
• a part of the sixth semiconductor region is located between a part of the third electrode and the second conductive portion in the second direction;
• the sixth semiconductor region is located between the sixth partial region and the seventh semiconductor region in the first direction;
• the seventh semiconductor region is located between another part of the third electrode and the second conductive portion;
• the eighth semiconductor region is located between the first face and the fourth partial region, and between the first face and the fifth partial region;
• the first insulating member further includes a second insulating region;
• and
• the second insulating region is provided between the semiconductor member and the third electrode.