Semiconductor device and method of manufacturing the same
AssigneeRenesas Electronics Corporation
InventorKouichi KONISHI
Life of this patent
Estimating the term…
Abstract
A source diffusion layer and a base diffusion layer are formed in regions of a semiconductor substrate located between a trench gate electrode and a trench emitter electrode that are spaced apart from each other. The trench emitter electrode, the base diffusion layer, and an insulating film have a recess that recede from a first main surface toward a second main surface. A shared contact member protrudes from the first main surface toward the second main surface in a manner contacting the recess. According to above structure of a semiconductor device, it is capable of efficiently discharging carriers to an emitter during turn-off.
Claims5
A manufacturing method of a semiconductor device, comprising the steps of:
- (a) forming a first trench on a semiconductor substrate of a first conductivity type having a first main surface;
- (b) forming a first trench emitter electrode embedding in the first trench via a first insulating film;
- (c) forming a first impurity region of a second conductivity type opposite to the first conductivity type in a first region in the semiconductor substrate and contacting with the first trench;
- (d) forming an interlayer insulating film on the first main surface;
- (e) forming an opening penetrating the interlayer insulating film and exposing a part of the first impurity region, the first trench emitter electrode and the first insulating film respectively including a recess on the semiconductor substrate so as to straddle between the first trench emitter electrode and the first impurity region, in plan view;
- and
- (f) embedding a first contact member in the opening including the recess, wherein
- the recess including:
- a first portion formed in the first impurity region and has a first depth which is a depth from the first main surface;
- a second portion formed in the first trench emitter electrode and has a second depth which is a depth from the first main surface;
- and
- a third portion formed in the first insulating film and has a third depth which is a depth from the first main surface and located deeper than the first depth and the second depth.
Dependencies are inferred from the claim text.