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US 2026/0198026 A1Published application
Structure with emitter contact wider than emitter terminal and related method
AssigneeGlobalFoundries U.S. Inc.
InventorsJacob M. DeAngelis, Steven M. Shank, Sarah A. McTaggart, Megan Elizabeth Lydon-Nuhfer, Uppili S. Raghunathan, Daisy A. Dillon
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Abstract
The disclosure provides a structure with an emitter contact wider than an emitter terminal, and related methods. A structure of the disclosure includes an emitter contact within an inter-level dielectric (ILD) layer and on an emitter terminal of a bipolar transistor, wherein a horizontal width of the emitter contact is greater than a horizontal width of the emitter terminal thereunder.
Claims20
A structure comprising:
- an emitter contact within an inter-level dielectric (ILD) layer and on an emitter terminal of a bipolar transistor, wherein a horizontal width of the emitter contact is greater than a horizontal width of the emitter terminal thereunder.
A structure comprising:
- a collector terminal including an epitaxial semiconductor material on a subcollector;
- an isolation layer on the subcollector and adjacent the collector terminal;
- a base terminal including:
- an intrinsic base on the collector terminal, wherein a semiconductor film is on the intrinsic base;
- and
- an extrinsic base adjacent the semiconductor film and on an upper surface of the isolation layer and in contact with the intrinsic base;
- an emitter terminal on the semiconductor film;
- and
- an emitter contact within an inter-level dielectric (ILD) layer and on the emitter terminal, wherein a horizontal width of the emitter contact is greater than a horizontal width of the emitter terminal thereunder.
6 more elements
A method comprising:
- forming an emitter contact within an inter-level dielectric (ILD) layer and on an emitter terminal of a bipolar transistor, wherein a horizontal width of the emitter contact is greater than a horizontal width of the emitter terminal thereunder.
Dependencies are inferred from the claim text.