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US 2026/0173536 A1Published application
Electrostatic discharge bipolar device with collector and emitter ballasting
AssigneeInternational Business Machines Corporation
InventorsMahender Kumar, Anthony I-Chih Chou, Ravikumar Ramachandran, Robert Gauthier
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Abstract
A semiconductor device includes a base, an emitter, a collector between the base and the emitter, a well region below the base, the emitter and the collector, and an isolating layer extended horizontally and at least partially isolating the well region from the collector and the emitter.
Claims20
A semiconductor device, comprising:
- a base;
- an emitter;
- a collector between the base and the emitter;
- a well region below the base, the emitter and the collector;
- and
- an isolating layer extended horizontally and at least partially isolating the well region from the collector and the emitter.
3 more elements
A method for fabrication of a semiconductor device, the method comprising:
- forming a base;
- forming an emitter;
- forming a collector between the base and the emitter;
- forming a well region below the base, the emitter and the collector;
- and
- forming an isolating layer extended horizontally and at least partially isolating the well region from the collector and the emitter.
3 more elements
A semiconductor device, comprising:
- a well region on a backside of the semiconductor device;
- and
- an isolating layer extended horizontally and at least partially isolating the well region from a frontside of the semiconductor device, wherein the isolating layer and the well region, form a junction configured to act as at least part of a lateral bipolar emitter and lateral bipolar collector for local ballasting and series resistance.
Dependencies are inferred from the claim text.