RC-IGBT and manufacturing method of RC-IGBT

A method of manufacturing a reverse conducting insulate gate bipolar transistor (RC-IGBT), the method comprising:

• forming an active area in a semiconductor body, the active area comprising:
• an IGBT area, a diode area, and a transition area laterally adjacent to the diode area;
• a plurality of trenches extending into the semiconductor body from a first surface of the semiconductor body, the first surface being opposite to a second surface of the semiconductor body;
• a drift region of a first conductivity type, wherein the drift region includes lifetime killing impurities in the transition area;
• a barrier region of the first conductivity type between the drift region and the first surface, wherein a maximum doping concentration in the barrier region is at least 100 times larger than an average doping concentration in the drift region, and wherein the barrier region laterally extends through at least part of the transition area, and laterally ends in or before the diode area;
• and
• forming an edge termination area at least partly surrounding the active area.