H10D 64/233
Cathode or anode electrodes for thyristors
Official title: {Cathode or anode electrodes for thyristors}
H10D64/233 (Cathode or anode electrodes for thyristors) appears on 134 US grants and 72 published applications in this corpus.
Search patents in H10D- Granted patents
- 134
- Published applications
- 72
- Assignees
- 78
- Inventors
- 211
- Latest grant
- 4 Nov 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 2 | 0 |
| 1978 | 4 | 0 |
| 1979 | 2 | 0 |
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 5 | 0 |
| 1983 | 3 | 0 |
| 1984 | 2 | 0 |
| 1985 | 1 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 4 | 0 |
| 1990 | 1 | 0 |
| 1991 | 5 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 3 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 1 | 2 |
| 2002 | 3 | 3 |
| 2003 | 7 | 3 |
| 2004 | 6 | 2 |
| 2005 | 8 | 2 |
| 2006 | 3 | 3 |
| 2007 | 1 | 2 |
| 2008 | 3 | 2 |
| 2009 | 0 | 0 |
| 2010 | 0 | 1 |
| 2011 | 2 | 0 |
| 2012 | 1 | 0 |
| 2013 | 1 | 0 |
| 2014 | 3 | 4 |
| 2015 | 3 | 2 |
| 2016 | 3 | 7 |
| 2017 | 7 | 5 |
| 2018 | 3 | 5 |
| 2019 | 6 | 7 |
| 2020 | 8 | 8 |
| 2021 | 6 | 7 |
| 2022 | 4 | 2 |
| 2023 | 5 | 3 |
| 2024 | 0 | 1 |
| 2025 | 2 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Power semiconductor device4 Nov 2025US 12,464,749 B2Hitachi Energy Ltd
- Chip with a silicon carbide substrate10 Jun 2025US 12,327,727 B2Infineon Technologies AG
- Process for producing an electrical contact on a silicon carbide substrate24 Oct 2023US 11,798,807 B2Infineon Technologies AG
- Gate-turn-off thyristor and manufacturing method thereof18 Jul 2023US 11,705,510 B2Hangzhou Ug Min Semiconductor Technology Co. Ltd
- Short-circuit semiconductor component and method for operating it30 May 2023US 11,664,445 B2Infineon Technologies Bipolar GmbH & Co. KG
- Chip with a silicon carbide substrate and an electrical contact21 Aug 2025US 2025/0266259 A1Infineon Technologies AG
- Semiconductor device22 Feb 2024US 2024/0063265 A1
- Chip with a Silicon Carbide Substrate28 Dec 2023US 2023/0420257 A1Infineon Technologies AG
- Power semiconductor device5 Oct 2023US 2023/0317818 A1Hitachi Energy Switzerland AG
- Semiconductor device4 May 2023US 2023/0136604 A1Sumitomo Electric Industries, Ltd.
Most cited
By later US patents
- Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches538US 6,229,161 B1Stanford University · 2001
- Semiconductor structures with trench contacts99US 6,037,628 AIntersil Corporation · 2000
- Semiconductor structures with trench contacts99US 6,437,399 B1Fairchild Semiconductor Corporation · 2002
- Thyristor-based device over substrate surface81US 6,653,174 B1T-Ram, Inc. · 2003
- Trench gate type insulated gate bipolar transistor51US 5,508,534 AMitsubishi Denki Kabushiki Kaisha · 1996