Short-circuit semiconductor component and method for operating it

A short-circuit semiconductor component comprising:

• a semiconductor body, the semiconductor body including a rear-side base region of a first conduction type, an inner region of a second conduction type complementary to the first conduction type, and a front-side base region of the first conduction type successively arranged in a vertical direction starting from a rear side of the semiconductor body;
• a rear-side center determined by its geometric center of gravity towards a front side, which is opposite to the rear side;
• a front-side center determined by its geometric center of gravity,
• wherein the rear-side base region is connected in an electrically conductive manner to a rear-side electrode, the rear-side electrode having a lateral rear-side electrode width (WER),
• wherein the front-side base region is connected in an electrically conductive manner to a front-side electrode, the front-side electrode having a lateral front-side electrode width (WEV),
• wherein at least one front-side turn-on structure is embedded in the front-side base region, the at least one front-side turn-on structure at least partially covered by the front-side electrode and/or at least one rear-side turn-on structure is embedded in the rear-side base region, the at least one rear-side turn-on structure at least partially covered by the rear-side electrode,
• wherein one or both of the at least one front-side turn-on structure and the at least one rear-side turn-on structure is an emitter structure of the second conductive type, the emitter structure of the at least one front-side turn-on structure is contacted in an electrically conductive manner to the front-side electrode, the emitter structure of the at least one rear-side turn-on structure is contacted in an electrically conductive manner to the rear-side electrode, the emitter structure is configured to be turned on by at least one trigger structure, the at least one trigger structure is activated by an electrical turn-on signal supplied to it,
• wherein the at least one front-side turn-on structure has a lateral front-side turn-on structure width (WSV) determined by its lateral extent, and the at least one rear-side turn-on structure has a lateral rear-side turn-on structure width (WSR) determined by its lateral extent, wherein a ratio of the lateral front-side turn-on structure width (WSV) to the corresponding lateral front-side electrode width (WEV) is less than 1 and/or a ratio of the lateral rear-side turn-on structure width (WSR) to the corresponding lateral rear-side electrode width (WER) is less than 1,
• characterized in that
• the at least one trigger structure is configured to inject an electrical current surge into the semiconductor body between the at least one trigger structure and the at least one front-side and/or at least one rear-side turn-on structure to irreversibly destroy a first semiconductor junction formed between the at least one front-side turn-on structure and the front-side base region and/or a second semiconductor junction formed between the front-side base region and the inner region, or to irreversibly destroy a rear-side first semiconductor junction formed between the rear-side turn-on structure and the rear-side base region and/or a rear-side second semiconductor junction formed between the at least one rear-side base region and the inner region,
• wherein the front-side electrode and the rear-side electrode each comprise a contact disk that contacts the semiconductor body, and wherein the contact disks of the front-side electrode and the rear-side electrode each comprise molybdenum.