Gate-turn-off thyristor and manufacturing method thereof

A gate-turn-off thyristor, comprising:

• a plurality of strips formed by repeatedly arranging a plurality of N-type emitter regions with a high doping concentration of an upper transistor on an upper surface of an N-type silicon substrate with a high resistivity, wherein a periphery of each strip of the plurality of strips is surrounded with a P-type dense base region bus bar of the upper transistor, a cathode metal layer is disposed on an N-type emitter region of the plurality of N-type emitter regions of the upper transistor, and a P-type base region of the upper transistor is disposed below the N-type emitter region of the upper transistor;
• a side of the P-type base region of the upper transistor is connected to a P-type dense base region of the upper transistor or the P-type dense base region bus bar of the upper transistor, the P-type dense base region of the upper transistor or the P-type dense base region bus bar of the upper transistor has a doping concentration higher than a doping concentration of the P-type base region of the upper transistor, wherein an N-type collector region of the upper transistor is arranged below the P-type base region of the upper transistor, the P-type dense base region of the upper transistor and the P-type dense base region bus bar of the upper transistor, and a P-type emitter region of a lower transistor is disposed below the N-type collector region of the upper transistor;
• the P-type emitter region of the lower transistor is located at a bottom layer of the N-type silicon substrate;
• and
• a lower surface of the P-type emitter region of the lower transistor is connected to an anode metal layer, and a gate metal layer is disposed above the N-type silicon substrate, wherein
• the P-type dense base region of the upper transistor and the P-type dense base region bus bar of the upper transistor are intersected or parallel;
• an upper surface of the P-type dense base region bus bar of the upper transistor is connected with the gate metal layer;
• a repetitive distance between adjacent N-type emitter regions of the upper transistor in each strip is within 50 μm;
• and
• a die of the gate-turn-off thyristor is a square die.