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US 11,798,807 B2Granted
Process for producing an electrical contact on a silicon carbide substrate
AssigneeInfineon Technologies AG
InventorsStefan Krivec, Ronny Kern, Stefan Kramp, Gregor Langer, Hannes Winkler, Stefan Woehlert
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Abstract
A process for producing an electrical contact with a first metal layer and at least one second metal layer on a silicon carbide substrate includes removing at least some of the carbon residue by a cleaning process, to clean the first metal layer. The first metal layer and/or the at least one second metal layer may be generated by sputtering deposition.
Claims14
A method for producing an electrical contact with a first metal layer and at least one second metal layer on a silicon carbide substrate, the method comprising:
- depositing the first metal layer on the silicon carbide substrate;
- heat-treating the first metal layer to form a carbon residue;
- removing at least some of the carbon residue by a first cleaning process, to clean the first metal layer, wherein an oxide residue is present on the first metal layer after the first cleaning process;
- removing at least some of the oxide residue by a second cleaning process different than the first cleaning process, to clean the first metal layer;
- and
- after both the first cleaning process and the second cleaning process, depositing the at least one second metal layer onto a surface of the cleaned first metal layer.
3 more elements
Dependencies are inferred from the claim text.