Semiconductor device

A semiconductor device comprising:

• a substrate having conductivity;
• a first joint portion having conductivity, arranged on the substrate;
• a SiC diode chip arranged on the first joint portion;
• a second joint portion having conductivity, arranged on the SiC diode chip;
• and
• a transistor chip arranged on the second joint portion;
• the SiC diode chip including a cathode pad arranged on one end in a thickness direction and an anode pad arranged on another end in the thickness direction,
• the cathode pad being joined to the substrate by the first joint portion,
• the transistor chip including a drain electrode arranged on one end in a thickness direction,
• the drain electrode being joined to the anode pad by the second joint portion,
• the anode pad being arranged in a region enclosed by an outer edge of the SiC diode chip as viewed in a thickness direction of the substrate,
• the anode pad having an area larger than an area of the transistor chip as viewed in the thickness direction of the substrate.