Semiconductor device

A semiconductor device, comprising:

• a semiconductor body having a first surface, a second surface opposite the first surface in a vertical direction, a gate region, and an active region arranged adjacent to the gate region in a horizontal direction;
• a first emitter of a first conductivity type, a first base of a second conductivity type, and a second base of the first conductivity type which are arranged consecutively between the second surface and the first surface in the vertical direction;
• a front-facing emitter of the second conductivity type arranged in the active region and extending from the first surface to the second base in the vertical direction;
• and
• a plurality of short-circuit regions of the first conductivity type extending from the first surface through the front-facing emitter to the second base,
• wherein the active region has a first edge region adjacent to the gate region in the horizontal direction, a failure region adjacent to the first edge region in the horizontal direction, and a second edge region adjacent to the failure region in the horizontal direction,
• wherein an average density of the short-circuit regions arranged in the failure region is lower than an average density of the short-circuit regions arranged in each of the first edge region and the second edge region.