H10D 64/232
Emitter electrodes for igbts
Official title: {Emitter electrodes for IGBTs}
H10D64/232 (Emitter electrodes for igbts) appears on 321 US grants and 499 published applications in this corpus.
Search patents in H10D- Granted patents
- 321
- Published applications
- 499
- Assignees
- 73
- Inventors
- 699
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2005 | 0 | 1 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 1 | 1 |
| 2012 | 1 | 0 |
| 2013 | 2 | 3 |
| 2014 | 0 | 0 |
| 2015 | 0 | 2 |
| 2016 | 2 | 4 |
| 2017 | 7 | 10 |
| 2018 | 8 | 26 |
| 2019 | 26 | 64 |
| 2020 | 46 | 63 |
| 2021 | 54 | 46 |
| 2022 | 49 | 57 |
| 2023 | 27 | 55 |
| 2024 | 29 | 35 |
| 2025 | 45 | 79 |
| 2026 | 24 | 53 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Method of manufacturing semiconductor device and semiconductor device having trench contact25 Aug 2026US 12,721,073 B2Fuji Electric Co., Ltd.
- Semiconductor device4 Aug 2026US 12,701,730 B2Rohm Co., Ltd.
- Semiconductor device and method of manufacturing the same9 Jun 2026US 12,652,814 B2Renesas Electronics Corporation
- IGBT with shared emitter contact9 Jun 2026US 12,652,848 B2Renesas Electronics Corporation
- Semiconductor device9 Jun 2026US 12,652,975 B2Fuji Electric Co., Ltd.
- Semiconductor device1 Oct 2026US 2026/0304888 A1Fuji Electric Co., Ltd.
- Semiconductor device24 Sep 2026US 2026/0293175 A1Fuji Electric Co., Ltd.
- Semiconductor device17 Sep 2026US 2026/0282408 A1Minebea Power Semiconductor Device Inc.
- Metal film and manufacturing method of the metal film, and semiconductor device and method of manufacturing the semiconductor device20 Aug 2026US 2026/0247685 A1Renesas Electronics Corporation
- Semiconductor device metallization structure for reliability and robustness13 Aug 2026US 2026/0239715 A1Semiconductor Components Industries, LLC
Most cited
By later US patents
- Bidirectional bipolar-mode JFET driver circuitry32US 10,374,070 B22019
- Tunnel transistor16US 10,236,364 B1International Busines Machines Corporation · 2019
- Metallization and its use in, in particular, an IGBT or a diode11US 8,008,712 B2Infineon Technologies AG · 2011
- Semiconductor power devices integrated with a trenched clamp diode7US 8,564,047 B2Force Mos Technology Co., Ltd. · 2013
- Semiconductor power device with embedded diodes and resistors using reduced mask processes7US 8,569,780 B2Force Mos Technology Co., Ltd. · 2013