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US 2026/0239715 A1Published application
Semiconductor device metallization structure for reliability and robustness
AssigneeSemiconductor Components Industries, LLC
InventorsMingjiao LIU, Prasad VENKATRAMAN, Jin-Myung KIM
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Abstract
A semiconductor device includes a semiconductor substrate. A first metal layer having a first thickness is disposed on a first portion of a surface of the semiconductor substrate. A second metal layer having a second thickness is disposed on a second portion of the surface of the semiconductor substrate. The first thickness is greater than the second thickness. A passivating dielectric material layer is disposed over both the first metal layer and the second metal layer.
Claims23
A semiconductor device, comprising:
- a semiconductor substrate;
- a first metal layer having a first thickness disposed on a first portion of a surface of the semiconductor substrate;
- a second metal layer having a second thickness disposed on a second portion of the surface of the semiconductor substrate, the first thickness being greater than the second thickness;
- and
- a passivating dielectric material layer disposed over both the first metal layer and the second metal layer.
2 more elements
A method comprising:
- depositing a plurality of metal layers including a barrier metal layer and a top metal layer on a surface of a semiconductor device;
- patterning and etching the top metal layer to form a thick metal layer on a first portion of the surface;
- patterning and etching the plurality of metal layers to form a thin metal layer on a second portion of the surface;
- and
- depositing a passivating material layer on both the thick metal layer and the thin metal layer.
2 more elements
A method comprising:
- depositing a barrier metal layer on a surface of a semiconductor device;
- patterning and etching the barrier metal layer to form a thin metal layer;
- depositing a top metal layer on the surface of the semiconductor device including the thin metal layer;
- patterning and etching the top metal layer to form a thick metal layer in a first portion of the surface and expose the thin metal layer in a second portion of the surface;
- and
- depositing a passivating material layer on both the thick metal layer and the thin metal layer.
3 more elements
A method comprising:
- depositing a barrier metal layer followed by a top metal layer on a top surface of a device;
- a first photolithographic patterning and a first metal etching of the top metal layer and the barrier metal layer to form at least one thick metal layer structure including a portion of the top metal layer disposed on the barrier metal layer;
- a second photolithographic patterning and a second metal etching of the top metal layer to form at least one thin metal structure including a segment of the barrier metal layer disposed on the top surface of the device;
- and
- depositing a passivating material layer on both the at least one thick metal layer structure and the at least one thin metal structure.
2 more elements
Dependencies are inferred from the claim text.