Metal film and manufacturing method of the metal film, and semiconductor device and method of manufacturing the semiconductor device
AssigneeRenesas Electronics Corporation
InventorTadashi YAMAGUCHI
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Abstract
A metal film, a manufacturing method of the metal film, semiconductor device, and a manufacturing method of semiconductor device are provided with high crack resistance (higher hardness) during wire bonding. The Metal film has first metal crystal grains, and the second metal crystal grains. Each of the first metal crystal grains has dislocations. Each of the second metal crystal grains has no dislocations. The number of the first metal crystal grains having the dislocations is larger than the number of the second metal crystal grains having no dislocations.
Claims3
A manufacturing method of a metal film, comprising the steps of:
- (a) forming a metal film having a plurality of metal crystal grains;
- (b) forming point defects in the metal film;
- and
- (c) after the step of (b), generating dislocations in the metal film by annealing so as to recrystallize the plurality of metal crystal grains.
Dependencies are inferred from the claim text.