Metallization and its use in, in particular, an IGBT or a diode
AssigneeInfineon Technologies AG
InventorsFrank Hille, Hans-Joachim Schulze
Life of this patent
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Abstract
The invention relates to a metallization for an IGBT or a diode. In the case of this metallization, a copper layer (10, 12) having a layer thickness of approximately 50 μm is applied to the front side and/or rear side of a semiconductor body (1) directly or if need be via a diffusion barrier layer (13, 14). The layer (8, 12) has a specific heat capacity that is at least a factor of 2 higher than the specific heat capacity of the semiconductor body (1). It simultaneously serves for producing a field stop layer (5) by proton implantation through the layer (12) from the rear side and for masking a proton or helium implantation for the purpose of charge carrier lifetime reduction from the front side of the chip (1).
Claims37
A vertical power semiconductor component comprising a semiconductor chip, the semiconductor chip having a top main surface and a bottom main surface, wherein each of said top main surface and said bottom main surface is in a heat exchanging relationship with a top metallization layer and a bottom metallization each of which serving as a heat sink, each of said top metallization layer and said bottom metallization layer having a layer thickness of at least 15 μm and having a specific heat capacity per volume that is at least a factor of 1.3 higher than the specific heat capacity per volume of the semiconductor chip, wherein each of said top metallization layer and said bottom metallization layer serving as a heat sink contacts the respective main surface via a respective diffusion barrier layer.
A vertical power semiconductor component comprising a semiconductor chip, the semiconductor chip having a top main surface and a bottom main surface, wherein each of said top main surface and said bottom main surface is in a heat exchanging relationship with a top metallization layer and a bottom metallization each of which serving as a heat sink, each of said top metallization layer and said bottom metallization layer having a layer thickness of at least 15 μm and has a thermal capacity that is at least 10% of the thermal capacity of the semiconductor chip, wherein each of said top metallization layer and said bottom metallization layer serving as a heat sink contacts the respective main surface via a respective diffusion barrier layer.
A vertical power semiconductor component comprising a semiconductor chip, the semiconductor chip having a top main surface and a bottom main surface,
- wherein each of said top main surface and said bottom main surface is in a heat exchanging relationship with a top metallization layer and a bottom metallization each of which serving as a heat sink, each of said top metallization layer and said bottom metallization layer having a layer thickness of at least 15 μm and having a specific heat capacity per volume that is at least a factor of 1.3 higher than the specific heat capacity per volume of the semiconductor chip,
- wherein each of said top metallization layer and said bottom metallization layer serving as a heat sink contacts the respectively main surface via a respective diffusion barrier layer;
- and
- wherein said at least one layer serving as a heat sink is created by electrode-positing the layer or by depositing the layer by vapor deposition.
A vertical power semiconductor component comprising a semiconductor chip, the semiconductor chip having a top main surface and a bottom main surface,
- wherein each of said top main surface and said bottom main surface is in a heat exchanging relationship with a top metallization layer and a bottom metallization each of which serving as a heat sink, each of said top metallization layer and said bottom metallization layer having a layer thickness of at least 15 μm and has a thermal capacity that is at least 10% of the thermal capacity of the semiconductor chip,
- wherein each of said top metallization layer and said bottom metallization layer serving as a heat sink contacts the respective main surface via a respective diffusion barrier layer;
- and
- wherein said at least one layer serving as a heat sink is created by electrode-positing the layer or by depositing the layer by vapor deposition.
Dependencies are inferred from the claim text.