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US 12,652,848 B2Granted
IGBT with shared emitter contact
AssigneeRenesas Electronics Corporation
InventorKouichi Konishi
Life of this patent
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Abstract
A source diffusion layer and a base diffusion layer are formed in regions of a semiconductor substrate located between a trench gate electrode and a trench emitter electrode that are spaced apart from each other. The trench emitter electrode, the base diffusion layer, and an insulating film have a recess that recede from a first main surface toward a second main surface. A shared contact member protrudes from the first main surface toward the second main surface in a manner contacting the recess. According to above structure of a semiconductor device, it is capable of efficiently discharging carriers to an emitter during turn-off.
Claims10
A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type having a first main surface and a second main surface opposite to the first main surface;
- a first trench formed on the semiconductor substrate;
- a first trench emitter electrode embedded in the first trench via a first insulating film;
- a first impurity region of a second conductivity type opposite to the first conductivity type formed in a first region in the semiconductor substrate and contacted with the first trench;
- a recess formed on the semiconductor substrate and straddled between the first trench emitter electrode and the first impurity region, in plan view;
- an interlayer insulating film formed on the first main surface;
- and
- a first contact member penetrated through the interlayer insulating film and embedded in the interlayer insulating film and the recess, wherein
- the recess includes:
- a first portion formed in the first impurity region and has a first depth which is a depth from the first main surface;
- a second portion formed in the first trench emitter electrode and has a second depth which is a depth from the first main surface;
- and
- a third portion formed in the first insulating film and has a third depth which is a depth from the first main surface and located deeper than the first depth and the second depth.
10 more elements
A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type having a first main surface;
- a first trench, a second trench, a third trench and a fourth trench formed on the semiconductor substrate;
- a first trench emitter electrode embedded in the first trench via a first insulating film;
- a second trench emitter electrode embedded in the second trench via a second insulating film;
- a first trench gate electrode embedded in the third trench via a third insulating film;
- a second trench gate electrode embedded in the fourth trench via a fourth insulating film;
- a first impurity region of a second conductivity type opposite to the first conductivity type formed in a first region in the semiconductor substrate and contacted with the first trench and the second trench;
- a recess formed on the semiconductor substrate straddled between the first trench emitter electrode and the first impurity region, in plan view;
- an interlayer insulating film formed on the semiconductor substrate such that the interlayer insulating film covers the first main surface;
- and
- a first contact member penetrated through the interlayer insulating film and embedded in the interlayer insulating film and the recess, wherein
- the second trench emitter electrode is located separate apart from the first trench emitter electrode such that the first region is located between the first trench emitter electrode and the second trench emitter electrode,
- the second trench gate electrode is located separate apart from the first trench gate electrode such that a second region is located between the first trench gate electrode and the second trench gate electrode, and
- the recess includes:
- a first portion formed in the first impurity region and has a first depth which is a depth from the first main surface;
- a second portion formed in the first trench emitter electrode and has a second depth which is a depth from the first main surface;
- and
- a third portion formed in the first insulating film and has a third depth which is a depth from the first main surface and located deeper than the first depth and the second depth.
15 more elements
Dependencies are inferred from the claim text.