Semiconductor device
AssigneeRohm Co., Ltd.
InventorKohei Murasaki
Life of this patent
Estimating the term…
Abstract
This semiconductor device includes: an n-type drift layer; a p-type base region; a trench extending in the depth direction so as to pass through the base region and reach the drift layer; an insulating film formed on an inner surface of the trench; a gate trench surrounding the insulating film; and a p-type column region provided on the drift layer at a position at the bottom of the trench. The drift layer includes: a first region having a first concentration peak; and a second region that is provided at a position deeper than the trench and corresponding to the column region, and has a second concentration peak lower than the first concentration peak.
Claims19
A semiconductor device, comprising:
- a drift layer of a first conductive type;
- a body region of a second conductive type formed in the drift region at a side closer to a top surface of the drift region;
- a trench extending in a depth direction through the body region to the drift layer;
- an insulation film formed on a wall surface of the trench;
- a gate electrode surrounded by the insulation film;
- and
- a column region of a second conductive type located at a bottom portion of the trench in the drift layer;
- the drift layer including:
- a first region having a first concentration peak;
- and
- a second region located at a position deeper than the trench and corresponding to the column region, the second region having a second concentration peak that is lower than the first concentration peak, wherein the first region and the second region are separated from one another in the depth direction.
Dependencies are inferred from the claim text.