Semiconductor device
AssigneeMinebea Power Semiconductor Device Inc.
InventorYutaka KATO
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Abstract
The present invention provides a semiconductor device that operates adequately. The semiconductor device includes: a first conductive layer including a drift region; a first insulating layer contacting the first conductive layer; a side gate layer that is formed in an elongated shape, has ends, at least one of which joined to a gate wiring, extends along the first insulating layer, and is configured to apply a voltage to the first conductive layer via the first insulating layer; and a contact layer that is made of a metal-containing material having a lower volume resistivity than the side gate layer and extends in contact with the side gate layer.
Claims4
A semiconductor device comprising:
- a first conductive layer comprising a drift region;
- a first insulating layer contacting the first conductive layer;
- a gate wiring;
- a side gate layer that is formed in an elongated shape;
- has ends, at least one of which joined to the gate wiring;
- extends along the first insulating layer;
- and is configured to apply a voltage to the first conductive layer via the first insulating layer;
- and
- a contact layer that is made of a metal-containing material having a lower volume resistivity than the side gate layer and extends in contact with the side gate layer.
Dependencies are inferred from the claim text.