Semiconductor power devices integrated with a trenched clamp diode

A semiconductor power device integrated with a trenched clamp diode comprising:

• a plurality of first type gate trenches extending into a semiconductor silicon layer, surrounded by source regions of a first conductivity type encompassed in body regions of a second conductivity type in an active area;
• a trenched clamp diode comprising multiple back to back poly-silicon Zener diodes with alternating doped regions of said first conductivity type next to doped regions of said second conductivity type, formed in a wide first gate trench as a clamp diode trench extending into said semiconductor silicon layer;
• each of said first type gate trenches being filled with a shielded electrode in a lower portion and a gate electrode in an upper portion of said first type gate trenches wherein said source regions surrounding around said gate electrode, and said body regions disposed at a level above a bottom of said gate electrode;
• said shielded electrode formed by a first poly-silicon being insulated from said semiconductor silicon layer by a first gate insulation layer and said gate electrode formed by a second poly-silicon being insulated from said semiconductor silicon layer by a second gate insulation layer;
• said shielded electrode being insulated from said gate electrode by an inter-electrode insulation layer;
• said trenched clamp diode being formed by said first poly-silicon layer and being insulated from said semiconductor silicon layer by said first insulation layer;
• and
• a plurality of trenched source-body contacts penetrating through a contact interlayer, said source regions and extending into said body regions between adjacent said first type gate trenches filled with a contact metal plug and connected to a source metal layer of said semiconductor power device.