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US 8,569,780 B2Granted
Semiconductor power device with embedded diodes and resistors using reduced mask processes
AssigneeForce Mos Technology Co., Ltd.
InventorFu-Yuan Hsieh
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Abstract
A trench semiconductor power device integrated with a Gate-Source and a Gate-Drain clamp diodes without using source mask is disclosed, wherein a plurality source regions of a first conductivity type of the trench semiconductor device and multiple doped regions of the first conductivity type of the clamp diodes are formed simultaneously through contact open areas defined by a contact mask.
Claims5
A trench semiconductor power device integrated with a Gate-Source clamp diode for ESD protection, wherein:
- said trench semiconductor power device comprising:
- a plurality of first type trenched gates formed in a semiconductor silicon layer;
- source regions of a first conductivity type encompassed in body regions of a second conductivity type between two adjacent of said first type trenched gates, said source regions being connected to a source metal layer of said trench semiconductor power device;
- said Gate-Source clamp diode comprising:
- multiple back to back poly-silicon Zener diodes with alternating doped regions of said first conductivity type next to said second conductivity type;
- a plurality of trenched Gate-Source clamp diode contacts extending into all of said doped regions of said first conductivity type of said Gate-Source diode, and each being filled with a contact metal plug padded by a barrier metal layer;
- and
- said Gate-Source clamp diode being connected to a first gate metal layer on one side, and connected to said source metal layer on another side;
- wherein
- said first gate metal layer acting as a gate metal pad for gate metal bonding is connected to a second gate metal layer through a trenched resistor formed in said semiconductor silicon layer and partially disposed below said back to back poly-silicon Zener diodes, wherein said second gate metal layer is connected to at least a second type trenched gate having wider trench width than said first type trenched gates, and extending to said first type trenched gates for gate connection through a trenched gate contact filled with said contact metal plug in said second type trenched gate.
7 more elements
The trench semiconductor power device of claim further comprising:
- a plurality of trenched source-body contacts each filled with said contact metal plug penetrating through said source regions and extending into said body regions between two adjacent of said first type trenched gates;
- and
- said source regions having a doping concentration along trench sidewalls of said trenched source-body contacts higher than along a channel region near an adjacent first type trenched gate at a same distance from a top surface of said semiconductor silicon layer, and said source regions have a junction depth along the trench sidewalls of said trenched source-body contacts greater than along said channel region, and said source regions have a doping profile of a Gaussian-distribution along the top surface of said semiconductor silicon layer from the trench sidewalls of said trenched source-body contacts to said channel region.
Dependencies are inferred from the claim text.