Varying the po space in semiconductor layouts

A semiconductor device comprising:

• a plurality of cells arranged in an array, wherein each cell of the plurality of cells comprises a first plurality of transistors;
• a first cell of the plurality of cells comprising at least five active regions that extend lengthwise along a first direction and are spaced apart along a second direction, each of the at least five active regions comprising a source region and a drain region for at least one transistor of the first plurality of transistors;
• a first set of seven conductive layers that extend lengthwise along the second direction across a first active region of the at least five active regions and are spaced apart along the first direction, the seven conductive layers of the first set comprising in sequence a first gate conductor, a first source/drain (S/D) conductor, a second gate conductor, a second S/D conductor, a third gate conductor, a third S/D conductor, and a fourth gate conductor;
• a second set of six conductive layers that extend lengthwise along the second direction across a second active region of the at least five active regions and are spaced apart along the first direction, the six conductive layers of the second set comprising in sequence a first gate conductor, a first source/drain (S/D) conductor, a second gate conductor, a third gate conductor, a second S/D conductor, and a fourth gate conductor;
• and
• wherein the first S/D conductor of the first set has a first dimension along the first direction;
• wherein the first S/D conductor of the second set has a second dimension along the first direction that is different from the first dimension.

A semiconductor device comprising:

• a plurality of memory cells arranged in a memory array, wherein each memory cell of the plurality of memory cells comprises a first plurality of transistors;
• a first memory cell of the plurality of memory cells comprising at least five active regions that extend lengthwise along a first direction and are spaced apart along a second direction, each of the at least five active regions comprising a source region and a drain region for at least one transistor of the first plurality of transistors;
• a first set of seven conductive layers that extend lengthwise along the second direction across a first active region of the at least five active regions and are spaced apart along the first direction, the seven conductive layers of the first set comprising in sequence a first gate conductor, a first source/drain (S/D) conductor, a second gate conductor, a second S/D conductor, a third gate conductor, a third S/D conductor, and a fourth gate conductor;
• a second set of six conductive layers that extend lengthwise along the second direction across a second active region of the at least five active regions and are spaced apart along the first direction, the six conductive layers of the second set comprising in sequence a first gate conductor, a first source/drain (S/D) conductor, a second gate conductor, a third gate conductor, a second S/D conductor, and a fourth gate conductor;
• wherein the first gate conductor of the first set extends lengthwise along the second direction across a third active region of the at least five active regions;
• wherein the second gate conductor of the first set extends lengthwise along the second direction across the third active region of the at least five active regions;
• wherein the second S/D conductor of the first set extends lengthwise along the second direction across the third active region of the at least five active regions;
• wherein the second S/D conductor of the first set has a first dimension along the first direction;
• wherein the second S/D conductor of the second set has a second dimension along the first direction;
• and
• wherein the first dimension is different from the second dimension.