Semiconductor device structure and methods of forming the same

A method for forming a semiconductor device structure, comprising:

• forming a source/drain region over a substrate;
• forming an interlayer dielectric layer over and adjacent the source/drain region;
• forming a first opening in the interlayer dielectric layer;
• depositing a dielectric material in the first opening;
• forming, from a front side of the dielectric material, a front side source/drain conductive contact over the source/drain region and in the dielectric material;
• flipping over the substrate;
• forming, from a back side of the dielectric material, a second opening in the dielectric material, wherein a side surface of the front side source/drain conductive contact is exposed by the second opening;
• and
• forming a back side conductive feature in the second opening to directly contact the first source/drain conductive contact.

A method for forming a semiconductor device structure, comprising:

• forming a first source/drain region and a second source/drain region over a substrate;
• forming a gate electrode layer adjacent the first and second source/drain regions;
• forming a first dielectric material between the first and second source/drain regions, wherein the first dielectric material extends through the gate electrode layer;
• forming, from a front side of the first dielectric material, a first front side source/drain conductive contact over the first source/drain region and in the first dielectric material, wherein the first front side source/drain conductive contact comprises a first surface facing the gate electrode layer and a second surface connected to the first surface and facing the second source/drain region;
• flipping over the substrate;
• forming, from a front side of the dielectric material, an opening in the first dielectric material to expose the first front side source/drain conductive contact;
• and
• forming a first back side conductive feature in the opening in the first dielectric material to directly contact the first front side source/drain conductive contact, the first back side conductive feature is disposed adjacent the second surface of the first front side source/drain conductive contact.