H10D 64/257
For lateral devices wherein the source or drain electrodes are characterised by
Official title: {for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes (source or drain electrodes of TFTs H10D30/673)}
H10D64/257 (For lateral devices wherein the source or drain electrodes are characterised by) appears on 1,554 US grants and 1,757 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,554
- Published applications
- 1,757
- Assignees
- 396
- Inventors
- 2,566
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 4 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 5 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 3 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 6 | 0 |
| 1994 | 5 | 0 |
| 1995 | 6 | 0 |
| 1996 | 5 | 0 |
| 1997 | 11 | 0 |
| 1998 | 13 | 0 |
| 1999 | 14 | 0 |
| 2000 | 14 | 0 |
| 2001 | 10 | 4 |
| 2002 | 17 | 19 |
| 2003 | 17 | 20 |
| 2004 | 26 | 23 |
| 2005 | 12 | 38 |
| 2006 | 30 | 45 |
| 2007 | 31 | 45 |
| 2008 | 19 | 35 |
| 2009 | 31 | 43 |
| 2010 | 45 | 39 |
| 2011 | 29 | 54 |
| 2012 | 46 | 56 |
| 2013 | 57 | 69 |
| 2014 | 79 | 83 |
| 2015 | 82 | 129 |
| 2016 | 123 | 140 |
| 2017 | 133 | 130 |
| 2018 | 102 | 73 |
| 2019 | 78 | 87 |
| 2020 | 96 | 102 |
| 2021 | 68 | 82 |
| 2022 | 67 | 114 |
| 2023 | 73 | 90 |
| 2024 | 79 | 105 |
| 2025 | 68 | 82 |
| 2026 | 38 | 50 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- H-bridge command circuit15 Sep 2026US 12,740,141 B2STMicroeletronics S.r.l.
- Extended source/drain contact for shifted drain voltage for a backside power distribution network1 Sep 2026US 12,727,229 B2International Business Machines Corporation
- Selective gate overdrive of transistor25 Aug 2026US 12,720,840 B2Infineon Technologies Canada Inc.
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- Transistor structure and method of forming the same1 Oct 2026US 2026/0304895 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Nitride semiconductor device1 Oct 2026US 2026/0304897 A1Panasonic Holdings Corporation
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- Semiconductor device and method for forming the same24 Sep 2026US 2026/0293293 A1National Yang Ming.Chiao Tung University
Most cited
By later US patents
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- High-voltage transistor with multi-layer conduction region222US 6,207,994 B1Power Integrations, Inc. · 2001
- Method of making a high-voltage transistor with multiple lateral conduction layers182US 6,168,983 APower Integrations, Inc. · 2001
- High frequency ring gate MOSFET161US 6,140,687 AMatsushita Electric Industrial Co., Ltd. · 2000
- MOS gate type semiconductor device115US 5,635,736 AKabushiki Kaisha Toshiba · 1997