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US 12,727,229 B2Granted
Extended source/drain contact for shifted drain voltage for a backside power distribution network
AssigneeInternational Business Machines Corporation
InventorsTsung-Sheng Kang, Tao Li, Ruilong Xie, Chih-Chao Yang
Life of this patent
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Abstract
A semiconductor device includes at least a direct backside contact between a source line and a source epitaxial growth and/or a drain line and a drain epitaxial growth. A clock signal line contact via can connect a gate to a backside clock signal line. The clock signal line contact via is surrounded by a deep STI fill to prevent shorting between the clock signal line and the source and/or drain lines in the backside power rail.
Claims20
A semiconductor device comprising:
- a direct backside contact between a drain line on a backside of the semiconductor device and a drain epitaxial growth of the semiconductor device;
- and
- a clock signal line contact via connecting a gate to a clock signal line at the backside of the semiconductor device, wherein the clock signal line contact via is surrounded by a deep shallow trench isolation (STI) fill.
A semiconductor device comprising:
- a direct backside contact between a drain line on a backside of the semiconductor device and a drain epitaxial growth of the semiconductor device;
- a clock signal line contact via connecting a gate to a clock signal line on the backside of the semiconductor device;
- and
- an extension, integral with the direct backside contact, formed at a drain line contact end of the direct backside contact, the extension providing a contact surface area for electrically connecting the direct backside contact with the drain line.
1 more element
A semiconductor device comprising:
- a direct backside contact between a drain line on a backside of the semiconductor device and a drain epitaxial growth of the semiconductor device;
- a clock signal line contact via connecting a gate to a clock signal line on the backside of the semiconductor device;
- a deep STI fill surrounding the clock signal line contact via;
- and
- an extension, integral with the direct backside contact, formed at a drain line contact end of the direct backside contact, the extension providing a contact surface area configured to electrically connect the direct backside contact with the drain line, wherein
- the extension extends in a first direction toward a central longitudinal axis of the drain line;
- and
- the extension extends in a second direction parallel with the central longitudinal axis.
5 more elements
Dependencies are inferred from the claim text.