Nitride semiconductor device

Abstract

A nitride semiconductor device includes a substrate, a first nitride semiconductor layer of a first conductivity type disposed above the substrate, a second nitride semiconductor layer of a second conductivity type disposed above the first nitride semiconductor layer, the second conductivity type being a polarity opposite to the first conductivity type, and an electron transit layer and an electron supply layer disposed in order from the substrate side, and covering an inner surface of a first opening penetrating the second nitride semiconductor layer and reaching the first nitride semiconductor layer and above the second nitride semiconductor layer. A thickness of the electron supply layer at a first position is thicker than a thickness of the electron supply layer at a second position. The second position is a position closer to the first opening than the first position is in plan view of the substrate.

Dependencies are inferred from the claim text.